Preparation method of HRP (High Resistance Poly) resistor and method for changing resistance thereof

A technology of resistance and resistance value, which is applied in the field of semiconductor manufacturing, can solve the problems of difficult use of devices, single and strict application conditions, lack of adjustability, etc., and achieve the effect of facilitating production and simple and easy preparation methods

Active Publication Date: 2016-08-03
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, once the HRP resistor prepared by the above method is completed, its resistance value will be fixed, and it lacks adjustability in some aspects of performance, that is, the application conditions of this fixed high-resistance device are relatively single and strict, and for some different For devices with different resistance values ​​that can realize different functions, it is difficult to use this kind of fixed resistance HRP resistor device, and the value of a device that can easily adjust the resistance can be reflected

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  • Preparation method of HRP (High Resistance Poly) resistor and method for changing resistance thereof
  • Preparation method of HRP (High Resistance Poly) resistor and method for changing resistance thereof
  • Preparation method of HRP (High Resistance Poly) resistor and method for changing resistance thereof

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Embodiment Construction

[0032] The preparation method of the HRP resistor of the present invention and the method for changing its resistance value will be described in more detail below in conjunction with the schematic diagram, wherein a preferred embodiment of the present invention is shown, and it should be understood that those skilled in the art can modify the present invention described here, while still achieving the advantageous effects of the present invention. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0033] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worke...

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Abstract

The invention provides a preparation method of an HRP (High Resistance Poly) resistor and a method for changing the resistance thereof. The preparation method comprises the steps of carrying out implantation of a first ion B on a resistor body, and then carrying out implantation of a second ion O. A substitution B and an interstice O form a BsO2i complex which does not affect the resistance at certain light conditions, so that the property of the resistor can be changed by changing the carrier concentration of the ion B, and thus the resistance of the HRP resistor can be changed. In addition, the preparation method is simple, each to implement and good for production. Furthermore, in the method provided by the invention for changing the resistance of the HRP resistor, only a certain period of illumination with certain intensity is required to be carried out if the resistance of the HRP resistor is required to be increased; and only heat treatment is carried out at a certain temperature if the resistance of the HRP resistor is required to be decreased.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for preparing an HRP resistor and a method for changing its resistance value. Background technique [0002] In the manufacturing process of a semiconductor chip, in order to realize certain functions of the device, some high-resistance devices, such as HRP (High Resistance Poly, high-resistance polysilicon) resistors, are usually fabricated in the chip. Common preparation methods of HRP resistors in the prior art include the following: [0003] Method 1: directly perform the first ion implantation IMP1 (implanted ions such as B or BF 2 ), changing the resistance value of crystalline silicon by adjusting the concentration of implanted ions to achieve the desired resistance device; [0004] Method 2: Perform the first ion implantation IMP1 in a part of the undoped crystalline silicon, and then perform the second ion implantation IMP2 in another part of the area...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
Inventor 陈林郑展徐超
Owner SEMICON MFG INT (SHANGHAI) CORP
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