Unlock instant, AI-driven research and patent intelligence for your innovation.
mim capacitor structure and its manufacturing method
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A technology of capacitor structure and manufacturing method, which is applied to circuits, electrical components, electrical solid devices, etc., can solve problems such as unfavorable integration, large substrate area, etc., and achieve the effect of increasing effective area and increasing capacitance value.
Active Publication Date: 2018-10-16
SEMICON MFG INT (SHANGHAI) CORP
View PDF4 Cites 0 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
That is to say, it is necessary to increase the area of the upper plate 23 and the lower plate 21 of the capacitor. Since both are planar structures, increasing the area will occupy a larger base area, which is not conducive to the improvement of integration.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0060] Please refer to figure 2 , in this embodiment, a method for making a MIM capacitor structure is proposed, for making a MIM capacitor structure, comprising steps:
[0061] S100: providing a base, in which a lower plate is formed;
[0062] S110: sequentially forming an etching stopper layer and an interlayer dielectric layer on the surfaces of the base and the lower plate;
[0063] S120: Etching the interlayer dielectric layer and the etch stop layer in sequence to form a stepped through hole in the interlayer dielectric layer, the stepped through hole exposing the lower electrode plate;
[0064] S130: Forming a side wall of the lower plate at the lower part of the side wall of the stepped through hole, the side wall of the lower plate is connected to the lower plate, and the height is smaller than the depth of the stepped through hole;
[0065] S140: Form a capacitor dielectric layer on the inner surface of the stepped through hole, and the capacitor dielectric layer ...
Embodiment 2
[0077] Please refer to Figure 10 , in this embodiment, another method for manufacturing a MIM capacitor structure is proposed, which is used to make the MIM capacitor structure as described above, including steps:
[0078] S200: Provide a base, and a lower electrode plate with an exposed surface is formed in the base;
[0079] S210: sequentially forming an etching stopper layer and an interlayer dielectric layer on the surfaces of the base and the lower plate;
[0080] S220: Etching the interlayer dielectric layer and the etching stopper layer to form a first through hole, the first through hole exposing the lower electrode plate;
[0081] S230: Form a lower pole plate side wall on the side wall of the first through hole, and the lower pole plate side wall is connected to the lower pole plate;
[0082] S240: filling the first through hole with a sacrificial layer;
[0083] S250: forming a supplementary dielectric layer on the interlayer dielectric layer;
[0084] S260: Et...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
PUM
Login to View More
Abstract
The invention proposes an MIM (Metal-Insulator-Metal) capacitor structure and a making method thereof. Lower pole plate sidewalls are formed on a lower pole plate, and the lower pole plate sidewalls are disposed on the bottoms of the two sides of a stepped through hole; then, a capacitordielectric layer is formed in the stepped through hole; and finally, an upper pole plate is formed on the surface of the capacitordielectric layer. As the height of the lower pole plate sidewalls is smaller than the depth of the stepped through hole, the formed capacitor dielectric layer completely covers the lower pole plate sidewalls. As the lower pole plate sidewalls are connected with the lower pole plate and can be taken as part of the lower pole plate, the effective area between the upper pole plate and the lower pole plate is increased, and the capacitance of the MIM capacitor is increased without additionally occupying the plane area of a substrate.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a MIM capacitor structure and a manufacturing method thereof. Background technique [0002] Capacitive components are often used as electronic passive devices in integrated circuits such as radio frequency ICs and monolithic microwave ICs. Common capacitive elements include metal-oxide-semiconductor (MOS) capacitors, PN junction capacitors, and MIM (metal-insulator-metal, metal-insulator-metal) capacitors. Among them, MIM capacitors provide better electrical characteristics than MOS capacitors and PN junction capacitors in some special applications. This is because MOS capacitors and PN junction capacitors are limited by their own structures, and the electrodes are prone to generate hole layers during operation. , causing its frequency characteristics to degrade. The MIM capacitor can provide better frequency and temperature-related characteristics. In addition, in s...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to View More 
Login to View More