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Large-area optical profile measurement device and method based on dual-wave interference fringe array

An interference fringe and profile measurement technology, applied in measurement devices, optical devices, instruments, etc., can solve problems such as slow measurement speed, and achieve the effect of broad application prospects

Active Publication Date: 2016-08-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantage of the line structured light method is that it needs to scan the light strip on the measured object, and the measurement speed is slow

Method used

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  • Large-area optical profile measurement device and method based on dual-wave interference fringe array
  • Large-area optical profile measurement device and method based on dual-wave interference fringe array
  • Large-area optical profile measurement device and method based on dual-wave interference fringe array

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Embodiment Construction

[0032] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0033] like figure 1 Shown is a schematic structural diagram of a large-area optical profilometer based on a dual-wavefront interference fringe array of the present invention. The large-area optical profilometry device based on the dual-wavefront interference fringe array of the present invention includes:

[0034] Semiconductor laser 1, used to emit coherent laser light;

[0035] Lens 2, used to receive and convert the coherent laser light emitted by the semiconductor laser;

[0036] The parallel plate group is used to receive and transform the light beam converted by the lens, and project the ...

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Abstract

The invention discloses a large-area optical profile measurement device and method based on a dual-wave interference fringe array. The device comprises a semiconductor laser, a lens, a parallel plate group, a CCD camera and a data processing unit. According to the method, non-parallel related light sources are adopted, large-area interference fringes are projected to a to-be-measured object through an optical system comprising the lens and the parallel plate group, the CCD camera receives distorted interference fringe array images modulated by the to-be-measured object, the data processing unit processes the images, a 3D surface profile of the to-be-measured object is reconstructed, and the optical profile measurement for the to-be-measured object is realized. The device and the method have the characteristics of rapidness, non-contact, high precision and large area, and have broad application prospect.

Description

technical field [0001] The invention belongs to the technical field of three-dimensional surface shape measurement, and in particular relates to a large-area optical profile measurement device and method based on a double-wavefront interference fringe array. Background technique [0002] With the rapid development of computer, information processing, and optoelectronic technology, optical three-dimensional measurement technology has been widely used. Especially in the fields of industrial manufacturing, product inspection, reverse engineering, biomedicine, film and television special effects, cultural relics protection and other fields, 3D surface shape measurement technology has broad application prospects and research significance. Optical three-dimensional measurement technology is recognized as the most promising method for three-dimensional surface shape measurement because of its fast, non-contact and high precision. [0003] (1) Surface structured light projection ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01B11/24
CPCG01B11/2441
Inventor 余学才肖景天任华西王晓庞
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA