Hot plate air extracting device and temperature control method thereof

Abstract

The invention provides a hot plate air extracting device, which comprises a box body, a hot plate and an air extracting unit, wherein the box body comprises a process chamber; various functional components of the hot plate air extracting device are accommodated into the box body; the hot plate is fixedly arranged in the process chamber through a supporting body; a to-be-processed wafer is arranged on the hot plate; the air extracting unit is electrically connected with the temperature control unit for detecting the temperature in the process chamber and regulates and controls an output power of the air extracting unit according to the detected temperature of the temperature control unit. Through the hot plate air extracting device and the temperature control method thereof, the temperature in the process chamber can be detected in real time; and the output power of the air extracting unit is regulated and controlled to maintain a stable process environment in the process chamber, so that the thickness uniformity of a photoresist, the critical dimension (CD) stability and uniformity and the profile (Profile) stability are achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a hot plate air extraction device and a temperature control method thereof. Background technique [0002] In the photolithography process of the chip manufacturing industry, the improvement of photoresist quality plays an important role in improving the process window. The baking process of photoresist is a key link in the optimization of photoresist process window. In particular, post-exposure baking (PEB) plays the most important role for chemically amplified photoresist, and the existing exposure models are equipped with chemically amplified photoresist (Chemically Amplified Photoresist, CAR), baked after coating (PAB) control also affects photoresist thickness uniformity and pattern shape. However, the temperature control of the hot plate in the prior art is limited to the temperature control on the back of the wafer. The hot plate exhaust system install...

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Problems solved by technology

[0006] The present invention is aimed at the prior art. In the existing process chamber, the temperature of the hot plate set before and after the adjacent batches of wafer production process is different, which will inevitably lead to excessive temperature fluctuation in the process chamber. Or due to the different temperatures and pumping pressures in the process chamber, the concentration of the photoresist’s side reactants is unstable and other defects. Provide a hot plate pumping device

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