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A method to reduce the noise of cis device by changing the film quality of sab

A device noise and film quality technology, applied in the field of microelectronics, can solve problems such as the decline of insulation capacity, and achieve the effects of reducing scattering, reducing traps, and reducing impact

Active Publication Date: 2018-11-09
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

If these photon energies are greater than SiO 2 Bandgap of gate oxide, SiO 2 After the valence band electrons of the material absorb photons, they will transition from the valence band to the conduction band, generating electron-hole pairs, making the gate oxide layer in a conduction state, resulting in a great decrease in its insulating ability

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  • A method to reduce the noise of cis device by changing the film quality of sab

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Embodiment Construction

[0021] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0022] In the following specific embodiments of the present invention, please refer to figure 1 , figure 1 It is a flowchart of a method for reducing the noise of a CIS device by changing the film quality of the SAB of the present invention. Such as figure 1 Shown, a kind of method of the present invention reduces the noise of CIS device by changing SAB film quality, can comprise the following steps:

[0023] Step 1: providing a substrate, the substrate has at least gate and source and drain structures.

[0024] The method of the invention reduces various noises of the CIS device by changing the film quality of the SAB. Firstly, the gate, source and drain structures are formed on the substrate used to prepare the CIS device, and other device structures conforming to the design rules may also be included.

[0025] Step 2: formin...

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Abstract

The invention discloses a method of reducing CIS (CMOS Image Sensor) device noise through changing SAB (Salicide Block) membrane. An HARP process is adopted to prepare an SAB layer with a porous membrane, an SAB layer with a dense membrane prepared by the previous PECVD process is changed, traps near a Si-SiO2 interface can be greatly reduced, scattering of phonons is reduced, the SAB layer prepared by the HARP process is thick, influences on a gate oxide layer by plasma damages in a subsequent process with plasmas are reduced, and various kinds of noise in the CIS product can be effectively reduced.

Description

technical field [0001] The invention relates to the technical field of microelectronics, and more specifically relates to a method for reducing various noises of CIS devices by changing the film quality of SAB. Background technique [0002] The noise of CIS (CMOS Image Sensor, CMOS image sensor) device is a key factor restricting its performance, quality and reliability, and it seriously affects the reliability of deep submicron integrated circuits. Therefore, reducing various types of noise has always been an important direction for improving the performance of CIS products. [0003] It is generally believed that the noise of CIS devices comes from irregular changes in carrier density or mobility in the channel. The former depends on Si-SiO 2 Thermally excited trapping and emission of carriers by traps near the interface, i.e. Si-Si0 2 The interface state density and its position in the forbidden band energy level; the latter is determined by the scattering of carrier an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H01L21/77
CPCH01L27/14683H01L27/14685
Inventor 秋沉沉曹亚民何亮亮杨大为王艳生魏峥颖
Owner SHANGHAI HUALI MICROELECTRONICS CORP