Side-wall-coarsened high-brightness light emitting diode and preparation method thereof

Abstract

The invention discloses a side-wall-coarsened high-brightness light emitting diode and a preparation method thereof. The side-wall-coarsened high-brightness light emitting diode comprises a gallium arsenide permanent substrate. A buffer layer, a light emitting layer, a window layer and a first electrode are successively arranged on the upper surface of the gallium arsenide permanent substrate. The buffer layer is made of n type gallium arsenide. The light emitting layer comprises an AlAS / AlGaAs reflection layer, an N-AlGaInP lower restriction layer, an AlGaInP active layer, a P-AlGaInP upper restriction layer, a P-GaInP buffer layer and a P-GaP coarsening layer. The P-GaP coarsening layer comprises a P-GaP positive coarsening layer and a P-GaP side wall coarsening layer. The first electrode is arranged on the P-GaP positive coarsening layer. The P-GaP side wall coarsening layer is of a V-shaped groove structure. The window layer is made of a SiN optical film. A second electrode is arranged on the lower surface of the gallium arsenide permanent substrate. The coarsened surface is covered by a passive film SiN, the refractive index difference between the light emitting layer and the packaging material is reduced, the emitting of light is facilitated, the abnormal electricity leakage of a light emitting area is prevented, and the reliability of the product is improved.

Description

technical field [0001] The invention relates to the field of semiconductor light-emitting diodes, in particular to a high-brightness light-emitting diode with roughened side walls and a preparation method thereof. Background technique [0002] Quaternary AlGaInP is a semiconductor material with direct wide bandgap, which has been widely used in the preparation of various optoelectronic devices. Since the luminescence band of AlGaInP material can cover the red to yellow-green band of visible light, the visible light-emitting diodes made from it have attracted extensive attention. [0003] The surface layer of the traditional vertical AlGaInP light-emitting diode is the GaP window layer. Due to the large refractive index difference between GaP and the packaging material, most of the light is totally reflected when it exits the GaP window layer, resulting in low light extraction efficiency. Some people use surface roughening technology to change the light angle, but the effect...

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Problems solved by technology

At the same time, the surface roughening technology can improve the total reflection at the interface between the AlGaInP chip and the packaging material, and the brightness will be higher. However, due to the many manufacturing steps and the very complicated process, the manufacturing cost is high and the yield is low.

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