The invention discloses a side-wall-coarsened high-brightness
light emitting diode and a preparation method thereof. The side-wall-coarsened high-brightness
light emitting diode comprises a
gallium arsenide permanent substrate. A buffer layer, a light emitting layer, a window layer and a first
electrode are successively arranged on the upper surface of the
gallium arsenide permanent substrate. The buffer layer is made of n type
gallium arsenide. The light emitting layer comprises an AlAS / AlGaAs reflection layer, an N-AlGaInP lower restriction layer, an AlGaInP
active layer, a P-AlGaInP upper restriction layer, a P-GaInP buffer layer and a P-GaP coarsening layer. The P-GaP coarsening layer comprises a P-GaP positive coarsening layer and a P-GaP side wall coarsening layer. The first
electrode is arranged on the P-GaP positive coarsening layer. The P-GaP side wall coarsening layer is of a V-shaped groove structure. The window layer is made of a SiN
optical film. A second
electrode is arranged on the lower surface of the
gallium arsenide permanent substrate. The coarsened surface is covered by a passive film SiN, the
refractive index difference between the light emitting layer and the packaging material is reduced, the emitting of light is facilitated, the abnormal
electricity leakage of a light emitting area is prevented, and the reliability of the product is improved.