A LED epitaxy structure

A technology of light-emitting diodes and epitaxial structures, which is applied in the field of optoelectronics, can solve the problems of large bandwidth and cannot effectively reflect incident light, etc., and achieve the effects of improving reflection angle, light extraction efficiency, and high reflection spectrum width.

Active Publication Date: 2009-04-08
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, the central wavelength of the reflection spectrum is shifted down by about half, and in many cases, the Al 2 o 3 Bragg reflectors, despite having a large bandwidth, do not reflect incident light efficiently

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A LED epitaxy structure
  • A LED epitaxy structure
  • A LED epitaxy structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] In the present invention, at least two sets of Bragg reflectors are grown between the conventional light-emitting diode structure and the gallium arsenide substrate, as shown in Figure 3, the two sets of Bragg reflectors are the Bragg reflectors that need to be oxidized for epitaxy, and then epitaxy does not need to be carried out on them. Oxidized Bragg reflectors, wherein the reflection spectrum of the first set of Bragg reflectors covers the radiated light of the LED, and the reflection spectrum of the other set of Bragg reflectors covers the radiated light of the LED after being oxidized. The first set of Bragg reflectors has the characteristics of conventional Bragg reflectors, and the periodic units are composed of AlGaAs / AlGaAs, or AlGaAs / AlGaInP, or AlGaInP / AlGaInP, or AlGaInP / AlGaAs. One layer of the periodic unit of the second set of Bragg reflectors should have a much larger oxidation rate than the other layer of material in the periodic unit under certain oxi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an extensional structure of light-emitting diode, and its characteristic: it has at least two Prague reflectors, where the reflection spectrum of one Prague reflector covers the radiant light of light-emitting diode, and that of the other one after oxidized covers the radiant light of light-emitting diode. Because the oxidized Prague reflector has very large reflectivity and width of reflection spectrum, the light-emitting diode is increased in light-inputting efficiency.

Description

technical field [0001] The invention relates to the technical field of optoelectronics, in particular to an epitaxial structure of a light emitting diode. Background technique [0002] The conventional structure of a light-emitting diode is as figure 1 , including a substrate 1 , a first-type conductivity carrier injection confinement layer 2 , an active layer 3 for controlling the emission wavelength, a second-type conductivity carrier injection confinement layer 4 , and a current spreading layer 5 . The current spreading layer is made of a conductive material with good light transmittance to avoid the absorption of light and achieve the purpose of current spreading at the same time. Such as AlGaInP series light-emitting diodes, the absorption of radiated light by the gallium arsenide substrate will significantly reduce the light-emitting efficiency of the light-emitting diodes. Reducing the absorption of radiated light by the substrate is one of the main measures to impr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L33/00H01S5/00
Inventor 何晓光
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap