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A LED epitaxy structure

A technology of light-emitting diodes and epitaxial structures, which is applied in the field of optoelectronics, can solve the problems of large bandwidth and cannot effectively reflect incident light, etc., and achieve the effects of improving reflection angle, light extraction efficiency, and high reflection spectrum width.

Active Publication Date: 2009-04-08
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this case, the central wavelength of the reflection spectrum is shifted down by about half, and in many cases, the Al 2 o 3 Bragg reflectors, despite having a large bandwidth, do not reflect incident light efficiently

Method used

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  • A LED epitaxy structure
  • A LED epitaxy structure
  • A LED epitaxy structure

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Embodiment Construction

[0013] In the present invention, at least two sets of Bragg reflectors are grown between the conventional light-emitting diode structure and the gallium arsenide substrate, as shown in Figure 3, the two sets of Bragg reflectors are the Bragg reflectors that need to be oxidized for epitaxy, and then epitaxy does not need to be carried out on them. Oxidized Bragg reflectors, wherein the reflection spectrum of the first set of Bragg reflectors covers the radiated light of the LED, and the reflection spectrum of the other set of Bragg reflectors covers the radiated light of the LED after being oxidized. The first set of Bragg reflectors has the characteristics of conventional Bragg reflectors, and the periodic units are composed of AlGaAs / AlGaAs, or AlGaAs / AlGaInP, or AlGaInP / AlGaInP, or AlGaInP / AlGaAs. One layer of the periodic unit of the second set of Bragg reflectors should have a much larger oxidation rate than the other layer of material in the periodic unit under certain oxi...

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Abstract

The invention discloses an extensional structure of light-emitting diode, and its characteristic: it has at least two Prague reflectors, where the reflection spectrum of one Prague reflector covers the radiant light of light-emitting diode, and that of the other one after oxidized covers the radiant light of light-emitting diode. Because the oxidized Prague reflector has very large reflectivity and width of reflection spectrum, the light-emitting diode is increased in light-inputting efficiency.

Description

technical field [0001] The invention relates to the technical field of optoelectronics, in particular to an epitaxial structure of a light emitting diode. Background technique [0002] The conventional structure of a light-emitting diode is as figure 1 , including a substrate 1 , a first-type conductivity carrier injection confinement layer 2 , an active layer 3 for controlling the emission wavelength, a second-type conductivity carrier injection confinement layer 4 , and a current spreading layer 5 . The current spreading layer is made of a conductive material with good light transmittance to avoid the absorption of light and achieve the purpose of current spreading at the same time. Such as AlGaInP series light-emitting diodes, the absorption of radiated light by the gallium arsenide substrate will significantly reduce the light-emitting efficiency of the light-emitting diodes. Reducing the absorption of radiated light by the substrate is one of the main measures to impr...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01S5/00
Inventor 何晓光
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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