Compact three-dimensional memory

Abstract

The present invention discloses a compact three-dimensional memory (3D-MC). By forming simple switching devices on the address-wires, a contact channel aperture can be shared by the address-wires in a same memory level, or different memory levels. The arrangement makes the channel apertures sparser and fewer, so as to realize sparse channel apertures, which have great significance to the realization of three-dimensional integrated circuit (3D-IC).

Description

technical field [0001] The present invention relates to the field of integrated circuit memories, more precisely three-dimensional memories (3D-M). Background technique [0002] Three-dimensional memory (3D-M) is a monolithic semiconductor memory that consists of multiple memory cells (also called memory devices) stacked on top of each other. 3D-M includes three-dimensional read-only memory (3D-ROM) and three-dimensional random access memory (3D-RAM). 3D-ROM can be further divided into three-dimensional mask programmed read-only memory (3D-MPROM) and three-dimensional electrically programmed read-only memory (3D-EPROM). Based on its programming mechanism, 3D-M can contain memristor, resistive random-access memory (RRAM or ReRAM), phase-change memory (PCM), programmable metallization memory (PMM), or conductive-bridging random-access memory (CBRAM), etc. . [0003] US Patent 5,835,396 discloses a 3D-M (3D-ROM) (Fig. 1A). It contains a semiconductor substrate 0 and substra...

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Problems solved by technology

However, the routing of substrate circuits becomes very difficult due to the dense via holes cutting the substrate into multiple isolated regions

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