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Low temperature fabrication of lateral thin film varistor

A varistor, lateral technology, applied in the IC field, can solve problems such as transient voltage sensitivity and insufficient robustness

Active Publication Date: 2016-09-07
IBM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Conventional ESD protection devices are usually not robust enough for applications where high current transients are more common
For example, silicon-controlled rectifier (SCR) devices or general-purpose transient voltage suppression (TVS) devices may not be suitable for ESD protection of radio frequency (RF) circuits fabricated on thin-film because thin-film substrates are more sensitive than thick-film substrates more sensitive to transient voltage

Method used

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  • Low temperature fabrication of lateral thin film varistor
  • Low temperature fabrication of lateral thin film varistor
  • Low temperature fabrication of lateral thin film varistor

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Embodiment Construction

[0015] Specific embodiments of the claimed structures and methods are disclosed herein; however, it is to be understood that the disclosed embodiments are merely illustrations of the claimed structures and methods, and that the claimed structures and methods can be embodied in various forms. form to manifest. However, this invention may be embodied in many different forms and should not be construed as limited to the exemplary embodiments described herein. Rather, these exemplary embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0016] In the following description, numerous specific details are set forth, such as specific structures, components, materials, dimensions, processing steps and techniques, in order to provide a thorough understanding of the present invention. However, one skilled in the art will recognize that the present invention may be practiced without ...

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Abstract

The invention relates to a low temperature fabrication of lateral thin film varistor. A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may consist of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

Description

technical field [0001] The present invention relates generally to ICs (Integrated Circuits), and more particularly to structures and methods for fabricating laterally configured thin film varistor surge protection devices using low temperature sputtering techniques that do not damage IC device components adjacent to the varistor being fabricated . Background technique [0002] High-performance IC chips are often subjected to transient voltages that can damage device components embedded in high-performance IC chips. In particular, devices fabricated on thin film substrates are very sensitive to ESD (Electrostatic Discharge). Conventional ESD protection devices are generally not robust enough for applications where high current transients are more common. For example, silicon-controlled rectifier (SCR) devices or general-purpose transient voltage suppression (TVS) devices may not be suitable for ESD protection of radio frequency (RF) circuits fabricated on thin-film because ...

Claims

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Application Information

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IPC IPC(8): H01L21/324H01L23/60H01L23/64C23C14/34
CPCC23C14/34H01L21/324H01L23/60H01L23/647H01C7/12H01L2924/0002H01C7/112H01L23/522H01L28/24H01C17/12H01L28/20H01C7/1013H01L2924/00H01L21/02266H01C17/06553H01C17/245H01C17/288H01C7/108H01L23/62H01L21/022H01C7/006H01C17/006H01L21/762H01L23/5226H01L23/528H01L27/0248H01L29/0649H01L21/02175
Inventor J·P·噶比诺R·S·格拉夫S·曼达尔
Owner IBM CORP
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