37results about "Thin film varistors" patented technology

The present invention relates to an IC substrate provided with over voltage protection functions and thus, a plurality of over voltage protection devices are provided on a single substrate to protect an IC chip directly. According to the present invention, there is no need to install protection devices at respective I / O ports on a printed circuit board to prevent the IC devices from damage by surge pulses. Therefore, the costs to design circuits are reduced, the limited space is efficiently utilized, and unit costs to install respective protection devices are lowered down.

A variable resistance element comprises a variable resistor of strongly-correlated material sandwiched between two metal electrodes, and the electric resistance between the metal electrodes varies when a voltage pulse is applied between the metal electrodes. Such a switching operation as the ratio of electric resistance between low and high resistance states is high can be attained by designing the metal electrodes and variable resistor appropriately based on a definite switching operation principle. Material and composition of the first electrode and variable resistor are set such that metal insulator transition takes place on the interface of the first electrode in any one of two metal electrodes and the variable resistor by applying a voltage pulse. Two-phase coexisting phase of metal and insulator phases can be formed in the vicinity of the interface between the variable resistor and first electrode by the work function difference between the first electrode and variable resistor.

In a temperature sensor section of a semiconductor integrated circuit device, wires of the topmost wiring layer of a multi-layer wiring structure are formed. A sheet-like temperature monitor element of vanadium oxide is provided between two of the wires in such a way as to cover the two wires. Accordingly, the temperature monitor element is connected between the two wires of an underlying wiring layer of the multi-layer wiring structure through two vias and the two wires of the topmost wiring layer.

The present invention provides an electrical circuit component, specifically a passive microwave device, and a method for producing the same. In one embodiment, the present invention provides an electrical circuit component, comprising: at least one patterned resistive area on a first surface of a diamond substrate, a first patterned conductive area on the first surface of the diamond substrate, and a second patterned conductive area on a second surface of the diamond substrate. The patterned resistive area may comprise a very thin film of tantalum nitride or a very thin film of tantalum nitride and a thin film of nichrome. The patterned conductive area may comprise a layer of titanium-tungsten, a layer of gold, and optionally a layer of nickel. Alternatively, the patterned conductive area may comprise a layer of chrome, a layer of copper, a layer of gold, and optionally a layer of nickel.

A varistor is provided having a rectangular configuration defining first and second opposing end surfaces offset in a lengthwise direction. The varistor may include a first terminal adjacent the first opposing end surface and a second terminal adjacent the second opposing end surface. The varistor may include an active electrode layer including a first electrode electrically connected with the first terminal and a second electrode electrically connected with the second terminal. The first electrode may be spaced apart from the second electrode in the lengthwise direction to form an active electrode end gap. The varistor may include a floating electrode layer including a floating electrode. The floating electrode layer may be spaced apart from the active electrode layer in a height-wise direction to form a floating electrode gap. A ratio of the active electrode end gap to the floating electrode gap may be greater than about 2.

An electronic device and a method of fabricating an electronic device are disclosed. The device includes a body of semiconductor material, and a conductive material defining at least three conducting contacts to form respective terminals. The semiconductor material and the conducting contacts overlap at least partially to define the device, so that the electrical characteristics of the device between any pair of terminals correspond to those of a varistor. The body of semiconductor material may be a layer deposited by printing or coating. The varistor characteristics between each pair of terminals enable switching of an electrical current between one terminal and any two other terminals in such a manner that when there is a positive current into a first terminal, there is a negligible current through a second terminal at which a positive potential is applied and a positive current out of a third terminal which is held at a negative potential with respect to the second terminal. When there is a negative current outwards of the first terminal, there is a positive current into the second terminal and a negligible current through the third terminal.

A varistor is provided having a rectangular configuration defining first and second opposing end surfaces offset in a lengthwise direction. The varistor may include a first terminal adjacent the first opposing end surface and a second terminal adjacent the second opposing end surface. The varistor may include an active electrode layer including a first electrode electrically connected with the first terminal and a second electrode electrically connected with the second terminal. The first electrode may be spaced apart from the second electrode in the lengthwise direction to form an active electrode end gap. The varistor may include a floating electrode layer including a floating electrode. The floating electrode layer may be spaced apart from the active electrode layer in a height-wise direction to form a floating electrode gap. A ratio of the active electrode end gap to the floating electrode gap may be greater than about 2.

An electronic element having at least a pair of electrodes is formed on a substrate. A varistor element is formed on the substrate, the varistor element including a pair of electrodes and a varistor insulating film. When a surge voltage is applied across the pair of electrodes of the varistor element, a surge current flows through the varistor insulating film. One electrode of the varistor element is connected to one electrode of the electronic element, and the other electrode of the varistor element is connected to the other electrode of the electronic element.

The invention discloses a multifunctional and multilayer-plate type array voltage dependent resistor and a preparation method of the multifunctional and multilayer-plate type array voltage dependent resistor. A resistor main body is composed of a plurality of layers of ceramic membrane sheets and an inner electrode, wherein the inner electrode comprises a plurality of public grounding electrodes and signal electrodes; the plurality of public grounding electrodes and the plurality of signal electrode are alternately arrayed in a stacking direction of the ceramic membrane sheets; the public grounding electrodes and the signal electrodes are partially overlapped in the stacking direction; each public grounding electrode extends toward a signal hole from the peripheral surface of the resistor main body and an allowance is formed between the public grounding electrode and the signal hole; each signal electrode extends toward the resistor main body from the peripheral surface of the signal hole and an allowance is formed between the signal electrode and the peripheral surface; a grounding leading-out end for covering leading-out parts of all the public grounding electrodes is arranged on the peripheral surface of the resistor main body; a signal leading-out end for covering leading-out parts of all the signal electrodes is arranged on the signal hole. By adopting the multifunctional and multilayer-plate type array voltage dependent resistor disclosed by the invention, the anti-electromagnetic interference capability of a filter connector can be effectively improved, and the electromagnetic interference problem of an interface is solved.

The present invention relates to a material and structure of an over-voltage protection device. The material of the over-voltage protection device includes either a P-type semiconductor powder or an N-type semiconductor powder and an adhesive. The structure of the over-voltage protection device includes a first electrode, a second electrode, and a porous matrix connected between the first and second electrodes. The present invention further relates to a method of manufacturing the over-voltage protection device.

A resistor with heat sink is provided. The heat sink includes a conductive path having metal or other thermal conductor having a high thermal conductivity. To avoid shorting the electrical resistor to ground with the thermal conductor, a thin layer of high thermal conductivity electrical insulator is interposed between the thermal conductor and the body of the resistor. Accordingly, a resistor can carry large amounts of current because the high conductivity thermal conductor will conduct heat away from the resistor to a heat sink. Various configurations of thermal conductors and heat sinks are provided offering good thermal conductive properties in addition to reduced parasitic capacitances and other parasitic electrical effects, which would reduce the high frequency response of the electrical resistor.

A resistor related in the invention comprises a substrate, an upper ohmic region disposed on a selective one of an upper surface and a lower surface of the substrate, an upper metal conducting layer overlies on the substrate and the upper ohmic region, and a lower metal conducting layer overlies on the lower ohmic region. When the upper and lower metal conducting layers are electrified, the upperohmic region and the lower ohmic region are electrically connected, as a result, a resistance value of the resistor is increased when an applied voltage on the resistor is increased.

The present invention relates to an IC substrate provided with over voltage protection functions and thus, a plurality of over voltage protection devices are provided on a single substrate to protect an IC chip directly. According to the present invention, there is no need to install protection devices at respective I / O ports on a printed circuit board to prevent the IC devices from damage by surge pulses. Therefore, the costs to design circuits are reduced, the limited space is efficiently utilized, and unit costs to install respective protection devices are lowered down.

A resistor with heat sink is provided. The heat sink includes a conductive path having metal or other thermal conductor having a high thermal conductivity. To avoid shorting the electrical resistor to ground with the thermal conductor, a thin layer of high thermal conductivity electrical insulator is interposed between the thermal conductor and the body of the resistor. Accordingly, a resistor can carry large amounts of current because the high conductivity thermal conductor will conduct heat away from the resistor to a heat sink. Various configurations of thermal conductors and heat sinks are provided offering good thermal conductive properties in addition to reduced parasitic capacitances and other parasitic electrical effects, which would reduce the high frequency response of the electrical resistor.

The invention discloses a multilayer chip varistor and a preparation method thereof. The preparation method includes: preparing pressure-sensitive diaphragms; laminating copper foils to the pressure-sensitive diaphragms, etching, and sequentially overlaying the pressure-sensitive diaphragms and the pressure-sensitive diaphragms with the copper foils to form a blank; compacting and cutting the blank to form a formed sample; sintering the formed sample to form a multilayer chip varistor ceramic body; coating sliver electrodes at the two ends of the multilayer chip varistor ceramic body, and performing thermal treatment to form the multilayer chip varistor. The multilayer chip varistor is obtained according to the preparation method. The multilayer chip varistor and the preparation method thereof have the advantage that utilization reliability of products is improved on the basis of reduction of preparation cost of the varistor.

The invention discloses a titanium dioxide / carbon dot composite film pressure sensor and a preparation method thereof. The preparation method comprises the following steps: preparing a porous TiO2 film, preparing nitrogen-doped carbon dots, and preparing and assembling a titanium dioxide / carbon dot composite membrane; and placing the porous TiO2 film attached to the FTO upwards, then taking the other blank FTO with the conductive surface facing downwards, covering the upper surface of the blank FTO in a staggered manner, taking the uncovered parts of the two pieces of FTO as leads, and fixingthe leads at the FTO leads through conductive silver paste, thereby obtaining the titanium dioxide / carbon dot composite film pressure sensor. The sensor combines the excellent properties of nano titanium dioxide and carbon dots, the carbon dots are doped, and the current change rate and the pressure of the sensor have a good linear relationship; and the sensor is simple in structure, high in sensitivity, high in response speed, low in cost and suitable for large-scale production and application. The pressure-sensitive film is a nano material and has a fluorescence characteristic; the pressuresensor is expected to be flexible and wearable and has a fluorescence function.

A resistor comprises a substrate, an upper ohmic region disposed on a selective one of an upper surface and a lower surface of the substrate and a lower ohmic region disposed on the other one of the upper surface and the lower surface of the substrate. An upper metal conducting layer overlies on the substrate and the upper ohmic region, and a lower metal conducting layer overlies on the lower ohmic region. When the upper and lower metal conducting layers are electrified, the upper ohmic region and the lower ohmic region are electrically connected, and a contact interface between the substrate and the upper metal conducting layer forms an enlarged depletion region to block electrical conduction therebetween. As a result, a resistance value of the resistor is increased when an applied voltage on the resistor is increased.

Disclosed is a voltage sensitive resistor (VSR) write once (WO) read only memory (ROM) device which includes a semiconductor device and a VSR connected to the semiconductor device. The VSR WO ROM device is a write once read only device. The VSR includes a CVD titanium nitride layer having residual titanium-carbon bonding such that the VSR is resistive as formed and can become less resistive by an order of 102, more preferably 103 and most preferably 104 when a predetermined voltage and current are applied to the VSR. A plurality of the VSR WO ROM devices may be arranged to form a high density programmable logic circuit in a 3-D stack. Also disclosed are methods to form the VSR WO ROM device.

The invention relates to a manufacturing method of zinc oxide-praseodymium oxide thin-film piezoresistor, which belongs to the technical field of electronic information material preparation and its application. The manufacturing method utilizes a radio frequency magnetron sputtering method to sinter the zinc oxide ceramic or the composite zinc oxide ceramic as a substrate target, and the other metal or its oxide is a dopant target and is deposited on a conductive substrate to obtain the zinc oxide thin film with low resistivity under an optimized sputtering process, and then the zinc oxide thin film is buried in the praseodymium oxide powder for hot-dip to obtain zinc oxide-praseodymium oxide thin-film piezoresistor. The thin-film piezoresistor has excellent non-linear performance, controllable voltage, low leakage current, impact aging and high temperature aging, and has wide application prospect in over-voltage protection of large scale or very large scale integrated circuits. The manufacturing method has the advantages of mild film deposition and hot-dip condition, process parameters are strictly controllable, and reproducibility is good. The manufacturing method also can obtain the film device with uniform composition, structure and thickness on a large area substrate, and is suitable for large-scale production.

The invention discloses a titanium dioxide / carbon dot composite film pressure sensor and a preparation method thereof, comprising porous TiO 2 Preparation of thin films, preparation of nitrogen-doped carbon dots, preparation and assembly of titanium dioxide / carbon dot composite films; porous TiO attached to FTO 2 Place the film facing up, then take another piece of blank FTO with the conductive side facing down, and cover it with dislocations. The uncovered parts of the two pieces of FTO are used as leads. Carbon dot composite film pressure sensor. The sensor combines the excellent properties of nano-titanium dioxide and carbon dots, doped with carbon dots, and the sensor's current change rate and pressure show a good linear relationship; and it has a simple structure, high sensitivity, fast response speed, and low cost. Suitable for mass production applications. The pressure-sensitive film is a nano-material with fluorescent properties; it is expected to be made into a flexible and wearable pressure sensor with fluorescent functions.

The invention relates to a low temperature fabrication of lateral thin film varistor. A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may consist of a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

An electronic component in which a metal layer is unlikely to be peeled from a substrate includes an insulating ceramic substrate, a ceramic layer diffusion-bonded to the substrate, a metal layer including a first principal surface and a second principal surface opposed to the first principal surface, with the first principal surface diffusion-bonded to the ceramic layer, and a characteristic layer diffusion-bonded to the second principal surface of the metal layer and prepared from a ceramic material, wherein the characteristic layer varies in resistance value with respect to ambient temperature or applied voltage.

An electronic device and a method of fabricating an electronic device are disclosed. The device includes a body of semiconductor material, and a conductive material defining at least three conducting contacts to form respective terminals. The semiconductor material and the conducting contacts overlap at least partially to define the device, so that the electrical characteristics of the device between any pair of terminals correspond to those of a varistor. The body of semiconductor material may be a layer deposited by printing or coating. The varistor characteristics between each pair of terminals enable switching of an electrical current between one terminal and any two other terminals in such a manner that when there is a positive current into a first terminal, there is a negligible current through a second terminal at which a positive potential is applied and a positive current out of a third terminal which is held at a negative potential with respect to the second terminal. When there is a negative current outwards of the first terminal, there is a positive current into the second terminal and a negligible current through the third terminal.

The present invention relates to an IC substrate provided with over voltage protection functions and thus, a plurality of over voltage protection devices are provided on a single substrate to protect an IC chip directly. According to the present invention, there is no need to install protection devices at respective I / O ports on a printed circuit board to prevent the IC devices from damage by surge pulses. Therefore, the costs to design circuits are reduced, the limited space is efficiently utilized, and unit costs to install respective protection devices are lowered down.

An integrated component may include a multilayer capacitor include a first active termination, a second active termination, at least one ground termination, and a pair of capacitors connected in series between the first active termination and the second active termination. The integrated component may include a discrete varistor comprising a first external varistor termination connected with the first active termination and a second external varistor termination connected with the second active termination of the multilayer capacitor.

The present invention relates to an IC substrate provided with over voltage protection functions and thus, a plurality of over voltage protection devices are provided on a single substrate to protect an IC chip directly. According to the present invention, there is no need to install protection devices at respective I / O ports on a printed circuit board to prevent the IC devices from damage by surge pulses. Therefore, the costs to design circuits are reduced, the limited space is efficiently utilized, and unit costs to install respective protection devices are lowered down.