35results about "Thin film varistors" patented technology

A varistor is provided having a rectangular configuration defining first and second opposing end surfaces offset in a lengthwise direction. The varistor may include a first terminal adjacent the first opposing end surface and a second terminal adjacent the second opposing end surface. The varistor may include an active electrode layer including a first electrode electrically connected with the first terminal and a second electrode electrically connected with the second terminal. The first electrode may be spaced apart from the second electrode in the lengthwise direction to form an active electrode end gap. The varistor may include a floating electrode layer including a floating electrode. The floating electrode layer may be spaced apart from the active electrode layer in a height-wise direction to form a floating electrode gap. A ratio of the active electrode end gap to the floating electrode gap may be greater than about 2.

An electronic element having at least a pair of electrodes is formed on a substrate. A varistor element is formed on the substrate, the varistor element including a pair of electrodes and a varistor insulating film. When a surge voltage is applied across the pair of electrodes of the varistor element, a surge current flows through the varistor insulating film. One electrode of the varistor element is connected to one electrode of the electronic element, and the other electrode of the varistor element is connected to the other electrode of the electronic element.

A thin film type varistor and a method of manufacturing the same are provided. The method includes: a depositing a first zinc oxide thin film at a low temperature through a sputtering method; and a forming a zinc oxide thin film for a varistor by treating the first zinc oxide thin film with heat at a low temperature in an environment in which an inert gas and oxygen are injected. Accordingly, it is possible to lower a processing temperature and simplify a manufacturing process while maintaining a varistor characteristic so as to be applied to a highly integrated circuit.

A variable resistance element comprises a variable resistor of strongly-correlated material sandwiched between two metal electrodes, and the electric resistance between the metal electrodes varies when a voltage pulse is applied between the metal electrodes. Such a switching operation as the ratio of electric resistance between low and high resistance states is high can be attained by designing the metal electrodes and variable resistor appropriately based on a definite switching operation principle. Material and composition of the first electrode and variable resistor are set such that metal insulator transition takes place on the interface of the first electrode in any one of two metal electrodes and the variable resistor by applying a voltage pulse. Two-phase coexisting phase of metal and insulator phases can be formed in the vicinity of the interface between the variable resistor and first electrode by the work function difference between the first electrode and variable resistor.

An electronic device and a method of fabricating an electronic device are disclosed. The device includes a body of semiconductor material, and a conductive material defining at least three conducting contacts to form respective terminals. The semiconductor material and the conducting contacts overlap at least partially to define the device, so that the electrical characteristics of the device between any pair of terminals correspond to those of a varistor. The body of semiconductor material may be a layer deposited by printing or coating. The varistor characteristics between each pair of terminals enable switching of an electrical current between one terminal and any two other terminals in such a manner that when there is a positive current into a first terminal, there is a negligible current through a second terminal at which a positive potential is applied and a positive current out of a third terminal which is held at a negative potential with respect to the second terminal. When there is a negative current outwards of the first terminal, there is a positive current into the second terminal and a negligible current through the third terminal.

A varistor is provided having a rectangular configuration defining first and second opposing end surfaces offset in a lengthwise direction. The varistor may include a first terminal adjacent the first opposing end surface and a second terminal adjacent the second opposing end surface. The varistor may include an active electrode layer including a first electrode electrically connected with the first terminal and a second electrode electrically connected with the second terminal. The first electrode may be spaced apart from the second electrode in the lengthwise direction to form an active electrode end gap. The varistor may include a floating electrode layer including a floating electrode. The floating electrode layer may be spaced apart from the active electrode layer in a height-wise direction to form a floating electrode gap. A ratio of the active electrode end gap to the floating electrode gap may be greater than about 2.

The invention discloses a multifunctional and multilayer-plate type array voltage dependent resistor and a preparation method of the multifunctional and multilayer-plate type array voltage dependent resistor. A resistor main body is composed of a plurality of layers of ceramic membrane sheets and an inner electrode, wherein the inner electrode comprises a plurality of public grounding electrodes and signal electrodes; the plurality of public grounding electrodes and the plurality of signal electrode are alternately arrayed in a stacking direction of the ceramic membrane sheets; the public grounding electrodes and the signal electrodes are partially overlapped in the stacking direction; each public grounding electrode extends toward a signal hole from the peripheral surface of the resistor main body and an allowance is formed between the public grounding electrode and the signal hole; each signal electrode extends toward the resistor main body from the peripheral surface of the signal hole and an allowance is formed between the signal electrode and the peripheral surface; a grounding leading-out end for covering leading-out parts of all the public grounding electrodes is arranged on the peripheral surface of the resistor main body; a signal leading-out end for covering leading-out parts of all the signal electrodes is arranged on the signal hole. By adopting the multifunctional and multilayer-plate type array voltage dependent resistor disclosed by the invention, the anti-electromagnetic interference capability of a filter connector can be effectively improved, and the electromagnetic interference problem of an interface is solved.

A resistor with heat sink is provided. The heat sink includes a conductive path having metal or other thermal conductor having a high thermal conductivity. To avoid shorting the electrical resistor to ground with the thermal conductor, a thin layer of high thermal conductivity electrical insulator is interposed between the thermal conductor and the body of the resistor. Accordingly, a resistor can carry large amounts of current because the high conductivity thermal conductor will conduct heat away from the resistor to a heat sink. Various configurations of thermal conductors and heat sinks are provided offering good thermal conductive properties in addition to reduced parasitic capacitances and other parasitic electrical effects, which would reduce the high frequency response of the electrical resistor.

The present invention relates to an IC substrate provided with over voltage protection functions and thus, a plurality of over voltage protection devices are provided on a single substrate to protect an IC chip directly. According to the present invention, there is no need to install protection devices at respective I / O ports on a printed circuit board to prevent the IC devices from damage by surge pulses. Therefore, the costs to design circuits are reduced, the limited space is efficiently utilized, and unit costs to install respective protection devices are lowered down.

The present invention relates to an IC substrate provided with over voltage protection functions and thus, a plurality of over voltage protection devices are provided on a single substrate to protect an IC chip directly. According to the present invention, there is no need to install protection devices at respective I / O ports on a printed circuit board to prevent the IC devices from damage by surge pulses. Therefore, the costs to design circuits are reduced, the limited space is efficiently utilized, and unit costs to install respective protection devices are lowered down.

A resistor with heat sink is provided. The heat sink includes a conductive path having metal or other thermal conductor having a high thermal conductivity. To avoid shorting the electrical resistor to ground with the thermal conductor, a thin layer of high thermal conductivity electrical insulator is interposed between the thermal conductor and the body of the resistor. Accordingly, a resistor can carry large amounts of current because the high conductivity thermal conductor will conduct heat away from the resistor to a heat sink. Various configurations of thermal conductors and heat sinks are provided offering good thermal conductive properties in addition to reduced parasitic capacitances and other parasitic electrical effects, which would reduce the high frequency response of the electrical resistor.

The invention discloses a multilayer chip varistor and a preparation method thereof. The preparation method includes: preparing pressure-sensitive diaphragms; laminating copper foils to the pressure-sensitive diaphragms, etching, and sequentially overlaying the pressure-sensitive diaphragms and the pressure-sensitive diaphragms with the copper foils to form a blank; compacting and cutting the blank to form a formed sample; sintering the formed sample to form a multilayer chip varistor ceramic body; coating sliver electrodes at the two ends of the multilayer chip varistor ceramic body, and performing thermal treatment to form the multilayer chip varistor. The multilayer chip varistor is obtained according to the preparation method. The multilayer chip varistor and the preparation method thereof have the advantage that utilization reliability of products is improved on the basis of reduction of preparation cost of the varistor.

The invention discloses a titanium dioxide / carbon dot composite film pressure sensor and a preparation method thereof. The preparation method comprises the following steps: preparing a porous TiO2 film, preparing nitrogen-doped carbon dots, and preparing and assembling a titanium dioxide / carbon dot composite membrane; and placing the porous TiO2 film attached to the FTO upwards, then taking the other blank FTO with the conductive surface facing downwards, covering the upper surface of the blank FTO in a staggered manner, taking the uncovered parts of the two pieces of FTO as leads, and fixingthe leads at the FTO leads through conductive silver paste, thereby obtaining the titanium dioxide / carbon dot composite film pressure sensor. The sensor combines the excellent properties of nano titanium dioxide and carbon dots, the carbon dots are doped, and the current change rate and the pressure of the sensor have a good linear relationship; and the sensor is simple in structure, high in sensitivity, high in response speed, low in cost and suitable for large-scale production and application. The pressure-sensitive film is a nano material and has a fluorescence characteristic; the pressuresensor is expected to be flexible and wearable and has a fluorescence function.

A resistor comprises a substrate, an upper ohmic region disposed on a selective one of an upper surface and a lower surface of the substrate and a lower ohmic region disposed on the other one of the upper surface and the lower surface of the substrate. An upper metal conducting layer overlies on the substrate and the upper ohmic region, and a lower metal conducting layer overlies on the lower ohmic region. When the upper and lower metal conducting layers are electrified, the upper ohmic region and the lower ohmic region are electrically connected, and a contact interface between the substrate and the upper metal conducting layer forms an enlarged depletion region to block electrical conduction therebetween. As a result, a resistance value of the resistor is increased when an applied voltage on the resistor is increased.

Disclosed is a voltage sensitive resistor (VSR) write once (WO) read only memory (ROM) device which includes a semiconductor device and a VSR connected to the semiconductor device. The VSR WO ROM device is a write once read only device. The VSR includes a CVD titanium nitride layer having residual titanium-carbon bonding such that the VSR is resistive as formed and can become less resistive by an order of 102, more preferably 103 and most preferably 104 when a predetermined voltage and current are applied to the VSR. A plurality of the VSR WO ROM devices may be arranged to form a high density programmable logic circuit in a 3-D stack. Also disclosed are methods to form the VSR WO ROM device.

The invention discloses a titanium dioxide / carbon dot composite film pressure sensor and a preparation method thereof, comprising porous TiO 2 Preparation of thin films, preparation of nitrogen-doped carbon dots, preparation and assembly of titanium dioxide / carbon dot composite films; porous TiO attached to FTO 2 Place the film facing up, then take another piece of blank FTO with the conductive side facing down, and cover it with dislocations. The uncovered parts of the two pieces of FTO are used as leads. Carbon dot composite film pressure sensor. The sensor combines the excellent properties of nano-titanium dioxide and carbon dots, doped with carbon dots, and the sensor's current change rate and pressure show a good linear relationship; and it has a simple structure, high sensitivity, fast response speed, and low cost. Suitable for mass production applications. The pressure-sensitive film is a nano-material with fluorescent properties; it is expected to be made into a flexible and wearable pressure sensor with fluorescent functions.

An electronic component in which a metal layer is unlikely to be peeled from a substrate includes an insulating ceramic substrate, a ceramic layer diffusion-bonded to the substrate, a metal layer including a first principal surface and a second principal surface opposed to the first principal surface, with the first principal surface diffusion-bonded to the ceramic layer, and a characteristic layer diffusion-bonded to the second principal surface of the metal layer and prepared from a ceramic material, wherein the characteristic layer varies in resistance value with respect to ambient temperature or applied voltage.

The present invention relates to an IC substrate provided with over voltage protection functions and thus, a plurality of over voltage protection devices are provided on a single substrate to protect an IC chip directly. According to the present invention, there is no need to install protection devices at respective I / O ports on a printed circuit board to prevent the IC devices from damage by surge pulses. Therefore, the costs to design circuits are reduced, the limited space is efficiently utilized, and unit costs to install respective protection devices are lowered down.

The present invention relates to an IC substrate provided with over voltage protection functions and thus, a plurality of over voltage protection devices are provided on a single substrate to protect an IC chip directly. According to the present invention, there is no need to install protection devices at respective I / O ports on a printed circuit board to prevent the IC devices from damage by surge pulses. Therefore, the costs to design circuits are reduced, the limited space is efficiently utilized, and unit costs to install respective protection devices are lowered down.

The invention discloses a multilayer chip varistor and a preparation method thereof. The preparation method includes: preparing pressure-sensitive diaphragms; laminating copper foils to the pressure-sensitive diaphragms, etching, and sequentially overlaying the pressure-sensitive diaphragms and the pressure-sensitive diaphragms with the copper foils to form a blank; compacting and cutting the blank to form a formed sample; sintering the formed sample to form a multilayer chip varistor ceramic body; coating sliver electrodes at the two ends of the multilayer chip varistor ceramic body, and performing thermal treatment to form the multilayer chip varistor. The multilayer chip varistor is obtained according to the preparation method. The multilayer chip varistor and the preparation method thereof have the advantage that utilization reliability of products is improved on the basis of reduction of preparation cost of the varistor.