126results about "Thick film varistors" patented technology

Methodologies are disclosed for producing multilayer electronic devices using a single screen printing mask. Plural layer devices are constructed by placing a common mask in alternating positions among alternating layers of support material such that, upon stacking of the plural layers, complimentary electrode structure is produced in alternating layers. Support material may be varied to produce different devices, including capacitors, resistors, and varistors. Multilayer electronic devices include multiple layers providing adjacent printed complimentary electrode layers having an upper surface, a lower surface, a front edge, and a back edge, and with lateral end portions of combined first and second layers trimmed so as to expose selected conductive patterns. Termination material is applied to at least such trimmed lateral end portions. A low inductance controlled equivalent series resistance (ESR) multilayer capacitor, includes at least two different pairs of electrodes, some of which have interdigitated respective side tabs. Termination material may be associated with such electrodes. In some instances, some electrodes may have dummy or anchor tabs associated with them but not electrically connected with them, to facilitate the formation of termination material at designated locations.

A ceramic electronic component that includes a ceramic element, and a coating film and external electrodes on a surface of the ceramic element. The coating film includes cationic elements from a constituent element of the ceramic element, which are ionized and deposited from the ceramic element, and a resin. The surface of the coating film is recessed relative to a surface of wrapping parts of the external electrodes on the surface of the ceramic element.

A low-temperature firing process is available for cost saving to produce a multilayer chip ZnO varistor containing pure silver (Ag) formed as internal electrodes and calcined at ultralow firing temperature of 850-900° C., which process comprises:

• a) individually preparing ZnO grains in advance doped with doping ions for promotion of semi-conductivity of ZnO grains if calcined;
• b) individually preparing a desired high-impedance sintering material to be fired as grain boundaries to encapsulate ZnO grains;
• c) mixing the doped ZnO grains of Step a) with the high-impedance sintering material of Step b) in a predetermined ratio to form a mixture and proceeding with an initial sintering to have the mixture sintered and ground as composite ZnO ceramic powders, and
• d) processing the sintered mixture of Step c) to make multilayer chip ZnO varistors containing pure silver (Ag) internal electrodes but sintered at ultralow firing temperature of 850-900° C.

In a varistor element, Ca exists in the grain interior of grains consisting primarily of ZnO in a varistor element body and Ca also exists in a grain boundary. In this crystal structure Ca replaces oxygen defects in the grain interior of grains consisting primarily of ZnO, in the varistor element body to make the ceramic structure denser Such crystal structure also decreases a ratio of an element tending to degrade the stability of the temperature characteristic of the varistor element, e.g., Si as a firing aid, in the grain boundary between grains. As a result, the varistor element has a stable temperature characteristic, which can decrease change in capacitance and tanδ (thermal conversion factor of resistance) against change in temperature.

An article is provided that includes a plurality of layers. Each layer includes a sinterable mass having a sinter temperature that is less than about 1000 degrees Celsius, and an inner electrode proximate to the sinterable mass. The inner electrode includes a material having a melting point that is within a determined temperature range of about 10 degrees Celsius to about 200 degrees Celsius relative to the sintering temperature. A method to make the article is also provided.

As for the voltage non-linear resistance element layer 2, sintered body (ceramics) having ZnO as main component is used. Said sintered body comprises Pr, Co, Ca and Na are added. Therefore, the ranges are 0.05 to 5.0 atm % of Pr, 0.1 to 20 atm % of Co, 0.01 to 5.0 atm % of Ca and 0.0001 to 0.0008 atm % of Na. When it is within the range, the capacitance changing rate at 85° C. with standard being 25° C. can be made to equal or less than 10%.

An object of the present invention is to provide a multilayer filter constructed so as to be less likely to suffer peeling between a varistor part and an inductor part. A multilayer filter 10 as a preferred embodiment has a structure in which a varistor part 20 and an inductor part are stacked. The varistor part 30 consists of a stack of varistor layers 31, 32 with internal electrodes 31a, 32a, and the varistor layers contain ZnO as a principal component, and contain at least one element selected from the group consisting of Pr and Bi, Co, and Al as additives. The inductor part 20 consists of a stack of inductor layers 21-24 with conductor patterns 21a-24a, and the inductor layers contain ZnO as a principal component and substantially contain neither Co nor Al.

A varistor having a favorable heat-dissipating property is provided.

In the varistor, a composite part having a favorable heat-dissipating property formed by a composite material composed of ZnO and Ag is arranged between main faces of a varistor matrix. Therefore, the heat transmitted from a semiconductor light-emitting device to a varistor part through an outer electrode can rapidly be transferred toward a main face on the opposite side through the composite part. In this varistor, side faces excluding inner side faces are exposed at side faces of the varistor matrix. Such a structure yields a favorable heat-dissipating property.

A surge absorbing element has a first electrode, a second electrode, and a ceramic layer. The second electrode is opposed to the first electrode. The ceramic layer has a polycrystal structure including a plurality of crystal grains showing voltage nonlinearity, and is at least partially brought into contact with the first electrode and the second electrode. The ceramic layer has a void inside therein, and surface discharge is generated on surfaces, exposed to the void, of the crystal grains, whereby electric conduction is attained between the first and second electrodes.

A ceramic element, including: a ceramic body having an internal electrode layer and a ceramic layer; an external electrode having a base electrode which is provided on the outside of the ceramic body so as to be electrically connected with the internal electrode layer, and a plating layer covering the outer surface of the base electrode; and a protective layer for covering at least a portion of the outer surface of the ceramic layer other than the portion covered by the external electrode, wherein the protective layer includes a first layer that is an insulating layer containing an insulating oxide, and a second layer that is an insulating layer containing the same insulating oxide as the first layer and an element that is the same as at least one of elements forming the ceramic layer, and the first layer and second layer are formed in that order from the inside.

A light emitting device has a semiconductor light emitting element and a multilayer chip varistor. The multilayer chip varistor has a multilayer body with a varistor portion therein, and a plurality of external electrodes disposed on an outer surface of the multilayer body. The varistor portion has a varistor layer containing ZnO as a principal component and exhibiting nonlinear voltage-current characteristics, and a plurality of internal electrodes arranged to interpose the varistor layer between them. Each of the external electrodes is connected to a corresponding internal electrode out of the plurality of internal electrodes. The semiconductor light emitting element is disposed on the multilayer chip varistor. The semiconductor light emitting element is connected to corresponding external electrodes out of the plurality of external electrodes so as to be connected in parallel to the varistor portion.

A composition includes a sintered mass having a plurality of cores and a grain boundary layer disposed between each of the plurality of cores. The core includes a transition metal oxide, and grain boundary layer includes a sintering additive, a grain growth inhibitor additive and a grain boundary additive.

An aggregate substrate has a first varistor part, a second varistor part, and a heat dissipation layer The first varistor part includes a first varistor element layer to exhibit nonlinear voltage-current characteristics, and a plurality of first internal electrodes juxtaposed in the first varistor element layer. The second varistor part includes a second varistor element layer to exhibit nonlinear voltage-current characteristics, and a plurality of second internal electrodes juxtaposed in the second varistor element layer The heat dissipation layer is located between the first and second varistor parts and is in contact with the first and second varistor parts.

An element body has first and second faces opposed to each other. A first conductor has one end exposed in a first face and the other end located in the element body. The second conductor has one end exposed in a second face and the other end located in the element body. The element body has a first element body section having the nonlinear voltage-current characteristics and a second element body section in which an electric current is more likely to flow than in the first element body section. The first element body section is located at least in part between the first conductor and the second conductor, in a direction in which the first conductor and the second conductor are separated from each other. The other end of the first conductor and the other end of the second conductor are located in the second element body section.