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Manufacturing method of zinc oxide-praseodymium oxide thin-film piezoresistor

A technology of zinc oxide thin film and varistor, which is applied in the direction of thin film varistor, varistor core, varistor, etc. It can solve the problem of poor high temperature stability, difficult double Schottky barrier, and high volatility of products. To achieve the effect of mild film deposition and hot dipping conditions, strict controllable process parameters, and excellent nonlinear performance

Inactive Publication Date: 2017-02-22
CHINA UNIV OF GEOSCIENCES (BEIJING)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the preparation of ZnO-Bi by magnetron sputtering 2 o 3 Varistors, requiring dual targets (Zn / ZnO and Bi / Bi 2 o 3 ), multi-target or various composite targets, and even more complex precursors
Due to its material composition and structure are difficult to control, the consistency of the product is unsatisfactory
Moreover, magnetron sputtering is known for its low-temperature deposition, and the ZnO grains and Bi 2 o 3 It is difficult to build an effective double Schottky barrier between thin films, so the nonlinear characteristics of the prepared thin film varistor are poor, the nonlinear coefficient usually does not exceed 10, and the high temperature stability of the product is also poor
[0004] In addition, traditional ZnO-Bi 2 o 3 When the base ceramic varistor is sintered in the high temperature liquid phase, the Bi 2 o 3 There are disadvantages such as high volatility and high reactivity
Bi 2 o 3 High volatility will change the combination ratio of additives in varistors, thereby changing their nonlinear characteristics; Bi 2 o 3 The high reactivity will destroy the multilayer structure of the varistor and reduce the number of effective grain boundaries, resulting in a decrease in surge absorption capacity

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  • Manufacturing method of zinc oxide-praseodymium oxide thin-film piezoresistor
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  • Manufacturing method of zinc oxide-praseodymium oxide thin-film piezoresistor

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preparation example Construction

[0038] The preparation method of zinc oxide-praseodymium oxide thin film varistor proposed by the present invention comprises the following steps and content:

[0039] (1) In the radio frequency magnetron sputtering equipment, sintered zinc oxide ceramics or sintered composite zinc oxide ceramics are used as matrix targets, and other metals or their oxides are used as doped targets, and the targets are fixed on the target position; Clean the substrate and fix it on the sample stage; turn on the mechanical pump to pump to a low vacuum, and turn on the molecular pump when the vacuum of the system reaches 0.1Pa until the vacuum of the system reaches 3×10 -4 Above Pa. Among them, the chemical composition of sintered zinc oxide ceramics is ZnO n , n is between 0.6-0.99; the main phase of sintered composite zinc oxide ceramics is zinc oxide, doped with one or more of Fe, Co, Ni, Mn oxides.

[0040] (2) Pass in the working gas argon with a purity of more than 99.99vol.%, and first ...

Embodiment 1

[0049] Example 1: Fix the Co-doped zinc oxide target and the clean highly doped conductive silicon substrate on the corresponding positions of the radio frequency magnetron sputtering equipment, close the chamber, first turn on the mechanical pump to a low vacuum of 0.1Pa, and then Turn on the molecular pump to pump to a high vacuum of 3×10 -4 Pa. Introduce high-purity argon gas, and pre-sputter for 1 min. Deposition was carried out at ambient temperature, only argon was passed through; the sputtering power was 240W, the sputtering pressure was 0.3Pa, and the deposition time was 100min. A Co-doped ZnO thin film was obtained. Then, the prepared Co-doped ZnO film was buried in analytically pure Pr 6 o 11 Soak in powder at a temperature of 500°C for 100 minutes, and then cool the sample to room temperature with the furnace. Coat the upper and lower surfaces of the sample with silver paste as electrodes, and solder the leads to obtain a varistor, and test its pressure-sensiti...

Embodiment 2

[0051] Embodiment 2: the ZnO 0.99 The target, pure Fe target and clean highly doped conductive silicon substrate are fixed on the corresponding positions of the magnetron sputtering equipment, the chamber is closed, the mechanical pump is first turned on to a low vacuum of 0.1Pa, and then the molecular pump is turned on to a high vacuum of 3 ×10 - 4 Pa. Introduce high-purity argon gas, and pre-sputter for 10 minutes. deposited at ambient temperature, followed by O 2 / Ar mixed gas with a ratio of 1:3, and ZnO is turned on at the same time 0.99 Target material and pure Fe target, the sputtering power is 160W, the sputtering pressure is 4.0Pa, and the deposition time is 60min. Fe-doped ZnO thin film was obtained. Then, the prepared Fe-doped ZnO film was buried in analytically pure Pr 6 o 11 Soak in powder at 300°C for 150 minutes, and then cool the sample to room temperature with the furnace. Coat the upper and lower surfaces of the sample with silver paste as electrodes...

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Abstract

The invention relates to a manufacturing method of zinc oxide-praseodymium oxide thin-film piezoresistor, which belongs to the technical field of electronic information material preparation and its application. The manufacturing method utilizes a radio frequency magnetron sputtering method to sinter the zinc oxide ceramic or the composite zinc oxide ceramic as a substrate target, and the other metal or its oxide is a dopant target and is deposited on a conductive substrate to obtain the zinc oxide thin film with low resistivity under an optimized sputtering process, and then the zinc oxide thin film is buried in the praseodymium oxide powder for hot-dip to obtain zinc oxide-praseodymium oxide thin-film piezoresistor. The thin-film piezoresistor has excellent non-linear performance, controllable voltage, low leakage current, impact aging and high temperature aging, and has wide application prospect in over-voltage protection of large scale or very large scale integrated circuits. The manufacturing method has the advantages of mild film deposition and hot-dip condition, process parameters are strictly controllable, and reproducibility is good. The manufacturing method also can obtain the film device with uniform composition, structure and thickness on a large area substrate, and is suitable for large-scale production.

Description

technical field [0001] The invention relates to a preparation method of a zinc oxide-praseodymium oxide film piezoresistor, belonging to the technical field of electronic information material preparation and application thereof. Background technique [0002] Modern technology development aims at the design and manufacture of various VLSIs, requiring a large number of miniaturized devices, including various varistors (Varistors) that can work under low voltage conditions. So far, most commercial varistors are based on ZnO-Bi 2 o 3 Based on composite ceramic electronic components, it is widely used in valve components to suppress the surge of transmission lines and overvoltage protection components of various electronic components (F. Jiang, et al. Journal of Advanced Ceramics, 2013, 2: 201- 212). [0003] Traditional ZnO-Bi 2 o 3 The base ceramic varistor is made of oxide Bi with ZnO and varistor characteristics 2 o 3 And a variety of other metal oxide additives mixed ...

Claims

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Application Information

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IPC IPC(8): H01C7/10H01C7/102H01C7/112H01C17/12C23C14/08C23C14/35
CPCH01C7/1013C23C14/08C23C14/35H01C7/102H01C7/112H01C17/12
Inventor 彭志坚王杨王琪符秀丽
Owner CHINA UNIV OF GEOSCIENCES (BEIJING)
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