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A kind of titanium dioxide/carbon dot composite film pressure sensor and its preparation method

A technology of pressure sensor and titanium dioxide, which is applied in thin film varistors, varistor cores, fluid pressure measurement by changing ohmic resistance, etc., can solve the problems of high production equipment requirements and complicated preparation process, and achieve low cost , simple preparation process and simple sensor structure

Active Publication Date: 2022-04-29
XINYU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problems of high requirements on production equipment and complex preparation process of traditional semiconductor material thin-film pressure sensors, and combine the excellent properties of porous nano-titanium dioxide and carbon dots to prepare a titanium dioxide / carbon dot composite film pressure sensor by a specific process , the sensor uses titanium dioxide / carbon dot composite film as the pressure-sensitive material, which has simple structure, high sensitivity, fast response speed, and low cost, suitable for large-scale production applications

Method used

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  • A kind of titanium dioxide/carbon dot composite film pressure sensor and its preparation method
  • A kind of titanium dioxide/carbon dot composite film pressure sensor and its preparation method
  • A kind of titanium dioxide/carbon dot composite film pressure sensor and its preparation method

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preparation example Construction

[0040] The invention provides a preparation method of a titanium dioxide / carbon dot composite membrane pressure sensor, comprising the following steps:

[0041] (1) Preparation of porous TiO2 thin film:

[0042] According to the mass ratio, 60-70% polyethylene glycol 20000 aqueous solution, 20-25% nano-TiO 2 , 0.5-1.5% acetylacetone and 4-8% absolute ethanol were mixed and stirred, ground, added 4-8% polyethylene glycol octyl phenyl ether aqueous solution, and continued to grind until uniform; TiO 2 slurry; the TiO 2 The slurry is coated on the surface of FTO; it is kept warm for a period of time, and then put into a resistance furnace for sintering to obtain porous TiO 2 film.

[0043] Among them, the concentration of polyethylene glycol 20000 aqueous solution is 10-20g / mL, and the concentration of polyethylene glycol octylphenyl ether aqueous solution is 5-15g / mL; the raw materials are mixed and stirred, and magnetic stirring and ultrasonic stirring are used to alternatel...

Embodiment 1

[0055] (1) Porous TiO 2 Film preparation: Weigh PEG-20000, add it into 10ml ultrapure water, and stir it magnetically to dissolve it; for PEG-20000 aqueous solution with a concentration of 10g / mL, take 65% PEG-20000 aqueous solution, and then add 25% nano-TiO 2 (P25), 0.5% acetylacetone and 5% dehydrated alcohol, magnetic stirring and ultrasonic stirring are alternately processed 6 times; after pouring into a mortar and grinding, adding 4.5% concentration is 10Vol.% Triton X100 aqueous solution, and continue grinding until Uniform; FTO is arranged in a vertical column, and TiO 2 The slurry is coated on the surface of the FTO; placed at room temperature for a period of time, kept at 60°C for 30 minutes, and then placed in a resistance furnace for sintering. The sintering temperature in the resistance furnace was uniformly raised from room temperature to 450°C at 4°C / min, and kept at this temperature for 30 minutes.

[0056] (2) Preparation of nitrogen-doped carbon dots: Weigh...

Embodiment 2

[0060] (1) Porous TiO 2 Film preparation: Weigh PEG-20000, add it into 10ml ultrapure water, and stir it magnetically to dissolve it; for PEG-20000 aqueous solution with a concentration of 15g / mL, take 62% PEG-20000 aqueous solution, and then add 25% nano-TiO 2 (P25), 1.5% acetylacetone and 7.5% dehydrated alcohol, magnetic stirring and ultrasonic stirring are alternately processed 5 times; after pouring into a mortar and grinding, adding 4% concentration is 5Vol.% Triton X100 aqueous solution, continue grinding until Uniform; FTO is arranged in a vertical column, and TiO 2 The slurry is coated on the surface of the FTO; placed at room temperature for a period of time, kept at 40°C for 50 minutes, and then put into a resistance furnace for sintering. The sintering temperature in the resistance furnace was uniformly raised from room temperature to 400°C at 4°C / min, and kept at this temperature for 40min.

[0061] (2) Preparation of nitrogen-doped carbon dots: weigh 2% of cott...

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Abstract

The invention discloses a titanium dioxide / carbon dot composite film pressure sensor and a preparation method thereof, comprising porous TiO 2 Preparation of thin films, preparation of nitrogen-doped carbon dots, preparation and assembly of titanium dioxide / carbon dot composite films; porous TiO attached to FTO 2 Place the film facing up, then take another piece of blank FTO with the conductive side facing down, and cover it with dislocations. The uncovered parts of the two pieces of FTO are used as leads. Carbon dot composite film pressure sensor. The sensor combines the excellent properties of nano-titanium dioxide and carbon dots, doped with carbon dots, and the sensor's current change rate and pressure show a good linear relationship; and it has a simple structure, high sensitivity, fast response speed, and low cost. Suitable for mass production applications. The pressure-sensitive film is a nano-material with fluorescent properties; it is expected to be made into a flexible and wearable pressure sensor with fluorescent functions.

Description

technical field [0001] The invention relates to the technical field of pressure sensors, in particular to a titanium dioxide / carbon dot composite membrane pressure sensor and a preparation method thereof. Background technique [0002] Pressure sensor is the most commonly used sensor in industrial practice, and it is widely used in petrochemical, aerospace, transportation, intelligent building and many other industries. At present, the main pressure sensors on the market include ceramic piezoresistive type, diffused silicon type, metal strain gauge paste type, differential pressure capacitive type, thin film type and so on. Among them, thin-film pressure sensors have attracted much attention because of their high precision, good creep resistance, and strong anti-interference ability. The traditional semiconductor material thin film pressure sensor uses single crystal silicon as the substrate, and the elastic film of the pressure chamber is obtained by anisotropic etching of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/20G01L9/02H01C7/10H01C7/115H01C17/075
CPCG01L1/20G01L9/02H01C7/1013H01C7/115H01C17/075
Inventor 黄平徐顺建张萌钟炜刘磊罗永平肖宗湖
Owner XINYU UNIV
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