An insulating substrate structure and a power module using the substrate

Abstract

The invention discloses an insulating substrate structure and a power module using the substrate. The insulating substrate includes a ceramic insulating layer and a metal layer formed on the ceramic insulating layer. The metal layer includes an upper bridge arm metal layer and a lower bridge arm metal layer. The upper bridge arm metal layer is provided with the upper bridge arm chip unit, the lower bridge arm metal layer is provided with the lower bridge arm chip unit, the lower bridge arm metal layer includes the wiring area, and the upper bridge arm chip unit and the wiring area are bonded The lower bridge arm metal layer is provided with an insulating equalization slot between the wiring area and the lower bridge arm chip unit. The invention can protect the power devices close to the DC input terminals, reduce the risk of device burnout due to overload, and balance the parasitic parameters of the parallel devices, especially the parasitic inductance and loop resistance, so as to achieve the effect of current sharing and avoid the burnt due to overcurrent, which improves the reliability of the power module.

Description

technical field [0001] The invention relates to a power semiconductor module, in particular to an insulating substrate structure and a power module using the substrate. Background technique [0002] The global energy crisis and the threat of climate warming make people pay more and more attention to energy conservation, emission reduction and low-carbon development while pursuing economic development. With the establishment and promotion of green environmental protection in the world, the development and application prospects of power semiconductors are broader. [0003] The power level of the current power module is constantly increasing. Although the current and voltage levels of the power device are constantly increasing, a single power device still cannot meet the needs of high-power converters, so the parallel connection of the internal devices of the power module has become an inevitable choice. The current sharing problem of multiple devices connected in parallel is ...

AI Technical Summary

Problems solved by technology

[0003] The power level of the current power module is constantly increasing. Although the current and voltage levels of the power device are constantly increasing, a single power device still cannot meet the needs of high-power converters, so the parallel connection of the internal devices of the power module has become an inevitable choice. The current sharing problem of multiple devices connected in parallel is also highlighted

All the half-bridge structures of existing power modules are connected to two DC input terminals together, and because of the different layout of power devices inside the power module, the parasitic parameters of multiple parallel devices are often inconsistent

When the power module is working, different parasitic parameters will cause inconsistencies in the current passing through the parallel devices. The chip with a large current may fail due to over-current burnout. , the reliability of the power module will also be affected in the long run

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