Manufacturing method of LTPS TFT based on metal induced crystallization process

Abstract

The invention provides a manufacturing method of an LTPS TFT based on a metal induced crystallization process. The manufacturing method comprises the steps of: forming a polycrystalline silicon thin film by adopting the metal induced crystallization process, wherein the top part of the polycrystalline silicon thin film is a metal silicide layer comprising a large number of metal ions and having an conductive property; adopting a halftone mask plate for carrying out patterning treatment on the polycrystalline silicon thin film to form an active layer, so that the metal silicide layer on a channel portion is etched away, and the purpose of reducing leakage current when the LTPS TFT is in an off state; and reserving the metal silicide layer on a source contact portion and a drain contact portion, thereby achieving the purposes of reducing contact resistance between the active layer and the source as well as the drain in the LTPS TFT.

Description

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AI Technical Summary

Benefits of technology

This technology allows creating lithography devices by controllably changing their electrical characteristics during production. By adding layers made of different materials or metals into this new material, it can improve its performance without affecting other components like transistors.

Problems solved by technology

This patented technical problem addressed in this patents relates to improving the performance of electronic displays that require thin films made from Low Temporary Solar Cell Materials (LTCF). Current methods involve depositing silicate glass onto an amorphous semiconductor called LPTF or forming it on top of another substrate like SiNx: These techniques result in poorly controlled thicknesses over time when producing these types of displays at reasonable costs. Additionally, some manufacturing processes may lead to contamination issues during deposition leading to reduced reliability.

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