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Metal-induced crystallization (MIC) is a method by which amorphous carbon (a-C), amorphous silicon (a-Si), and amorphous germanium (a-Ge) can be turned into their polycrystalline phases at relatively low temperatures.
Grain growth of silicon by metal induced crystallization
Provided is a method of manufacturing a semiconductor device which improves the grain size of the polysilicon channel and suppresses adverse effects resulting from remaining metal contents. After deposition of the polysilicon channel layer, a capping layer is deposited on the polysilicon channel layer. The capping layer comprises a metal aluminum alloy layer. The device is then annealed to increase the grain size of the polysilicon channel layer, and then the capping layer is removed.
Owner:APPLIED MATERIALS INC