69 results about "Metal-induced crystallization" patented technology

The present invention provides for a low-temperature method to crystallize a silicon-germanium film. Metal-induced crystallization of a deposited silicon film can serve to reduce the temperature required to crystallize the film. Increasing germanium content in a silicon-germanium alloy further decreases crystallization temperature. By using metal-induced crystallization to crystallize a deposited silicon-germanium film, temperature can be reduced substantially. In preferred embodiments, for example in a monolithic three dimensional array of stacked memory levels, reduced temperature allows the use of aluminum metallization. In some embodiments, use of metal-induced crystallization in a vertically oriented silicon-germanium diode having conductive contacts at the top and bottom end is be particularly advantageous, as increased solubility of the metal catalyst in the contact material will reduce the risk of metal contamination of the diode.

A method of manufacturing a thin film transistor that provides high electric field mobility is disclosed. The method comprising: a) forming an amorphous silicon layer and a blocking layer on an insulating substrate; b) forming a photoresist layer having first and second photoresist patterns on the blocking layer, the first and second photoresist patterns spaced apart from each other; c) etching the blocking layer using the first photoresist pattern as a mask to form first and second blocking patterns; d) reflowing the photoresist layer, so that the first and second photoresist patterns abut on each other to entirely cover the first and second blocking patterns; e) forming a metal layer over the entire surface of the insulating substrate; f) removing the photoresist layer to expose the blocking layer and an offset region between the blocking layer and the metal layer; g) crystallizing the amorphous silicon layer to form a poly silicon layer, wherein a portion of the amorphous silicon layer directly contacting the first metal layer is crystallized through a metal induced crystallization (MIC), and the remaining portion of the amorphous silicon layer is crystallized through a metal induced lateral crystallization (MILC), so that a MILC front exists on a portion of the poly silicon layer between the first and second blocking patterns; h) etching the poly silicon layer using the first and second blocking patterns as a mask to form first and second semiconductor layers and to remove the MILC front; and i) removing the first and second blocking patterns.