3 results about "Metal-induced crystallization" patented technology

Embodiments of the present technology may include semiconductor processing methods and systems, such as methods and systems for processing 3D DRAM devices. Methods and systems include depositing a plurality of layers of amorphous or poly-crystalline material over a substrate, forming a film stack. Methods include depositing a metal seed layer adjacent and parallel to an outer surface of the plurality of layers. Methods include annealing the plurality of unit stacks, driving the metal seed layer in a direction generally perpendicular to the plurality of layers of amorphous or poly-crystalline material, and removing the metal seed layer.

Embodiments of the present technology may include semiconductor processing methods and systems, such as methods and systems for processing 3D DRAM devices. Methods and systems include depositing a plurality of layers of amorphous or poly-crystalline material over a substrate, forming a film stack. Methods include depositing a metal seed layer adjacent and parallel to an outer surface of the plurality of layers. Methods include annealing the plurality of unit stacks, driving the metal seed layer in a direction generally perpendicular to the plurality of layers of amorphous or poly-crystalline material, and removing the metal seed layer.

Provided is a method of manufacturing a semiconductor device which improves the grain size of the polysilicon channel and suppresses adverse effects resulting from remaining metal contents. After deposition of the polysilicon channel layer, a capping layer is deposited on the polysilicon channel layer. The capping layer comprises a metal aluminum alloy layer. The device is then annealed to increase the grain size of the polysilicon channel layer, and then the capping layer is removed.