Metal-induced crystallization of amorphous silicon and metal removal techniques

An amorphous silicon film and technology technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems affecting polysilicon crystallization quality and crystallization speed, affecting the final characteristics of TFT, etc.

Inactive Publication Date: 2007-10-31
THE HONG KONG UNIV OF SCI & TECH
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  • Abstract
  • Description
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Problems solved by technology

However, the early occurrence of the gettering process will affect the crystallization quality and crystallization speed of polysilicon, and the gettering

Method used

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  • Metal-induced crystallization of amorphous silicon and metal removal techniques
  • Metal-induced crystallization of amorphous silicon and metal removal techniques
  • Metal-induced crystallization of amorphous silicon and metal removal techniques

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specific Embodiment

[0042] The specific embodiment preparation method is:

[0043] 1: 200 nanometers of silicon nitride and 100 nanometers of LTO are deposited as a barrier layer 102 on Corning 1737F glass 101 behind a thickness of 1.1 mm by PECVD. LPCVD at 550° C. to deposit a 50 nm amorphous silicon layer 103 .

[0044] 2: Using a nickel-silicon mixed target, sputtering in an argon-oxygen atmosphere to achieve a small amount of nickel 201 attached to the surface of amorphous silicon.

[0045] 3: The above samples were annealed in a nitrogen atmosphere at a temperature of 590° C. for 1 hour. It becomes a mixed film of the amorphous silicon film 301 and the polysilicon film 302 .

[0046] 4: Use diluted hydrofluoric acid to remove the natural oxide layer on the surface of the sample and clean the surface. Afterwards, LPCVD deposited PSG 501 with a thickness of 700 nm.

[0047] 5: The above sample is subjected to the second annealing process in a nitrogen atmosphere at a temperature of 590° C....

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Abstract

The invention relates to a technology for producing a high quality and large area polycrystalline silicon thin film by amorphous silicon-metal-induced crystallization. Crystallization-inducing metal elements of controllable amound are introduced onto an initial amorphous silicon thin film. A first, low-temperature, heat-treatment induces nucleation of metal-induced crystallization (MIC), resulting in the formation of small polycrystalline silicon''islands''. A metal-gettering layer is formed on the resulting partially crystallized thin film. A second, low-temperature, heat-treatment completes the MIC process to form the desired polycrystalline silicon thin film. while the metal-gettering layer can be removed at randon after crystallization heat-treatment.

Description

technical field [0001] The invention relates to the technology of preparing high-quality and large-area polysilicon film by inducing crystallization of amorphous silicon metal. This technique requires the introduction of controlled amounts of crystallization-inducing metal elements to the starting amorphous silicon film; the first low-temperature heat treatment causes metal-induced crystallization nucleation and the formation of small polysilicon "islands"; at this point the film material is partially crystallized The metal gettering layer is formed on it; the metal-induced crystallization process is completed in the second low-temperature heat treatment process, and the desired polysilicon film is formed; the metal gettering layer is removed after the crystallization heat treatment is completed. Background technique [0002] TFT can be applied to active matrix liquid crystal display, active matrix organic light emitting diode display, active matrix e-book and active matrix ...

Claims

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Application Information

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IPC IPC(8): H01L21/20H01L21/322H01L21/336H01L21/84
Inventor 王文郭海成孟志国张冬利施雪捷
Owner THE HONG KONG UNIV OF SCI & TECH
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