Polysilicon active layer-containing thin film transistor, manufacturing method thereof and array substrate

Abstract

The invention discloses a method for manufacturing a polysilicon active layer-containing thin film transistor. The method comprises the following steps of: depositing an amorphous silicon layer on a substrate; patterning the amorphous silicon layer; forming an active layer which comprises a source region, a drain region and a channel region; depositing an induced metal on the source region and the drain region; performing heat treatment on the active layer on which the induced metal is deposited, so that the active layer is subjected to metal-induced crystallization and metal-induced lateral crystallization under the action of the induced metal; doping a first impurity used for collecting the induced metal and a second impurity used for forming a P-channel metal oxide semiconductor (PMOS) or an N-channel metal oxide semiconductor (NMOS) into the source region and the drain region; and performing the heat treatment on the doped active layer, so that the second impurity is activated and the residue induced metal in the channel region is absorbed by the first impurity.

Description

technical field [0001] The present invention relates to the manufacturing technology of thin-film transistor (TFT), particularly a kind of thin-film transistor containing polysilicon active layer used for display device such as liquid crystal display (LCD) or organic electroluminescent display (OLED), its manufacturing method and array substrate. Background technique [0002] Due to the regular arrangement of atoms in polysilicon, the carrier mobility is high (10-300cm 2 / Vs), and also has a higher driving current, which can speed up the response time of the liquid crystal, reduce the volume of the TFT, increase the transmission area, and obtain higher brightness and resolution. These advantages of polysilicon are also crucial for active matrix organic electroluminescence display (AMOLED). Unlike the voltage driving method of liquid crystal, AMOLED adopts a current driving method, and only polysilicon TFT can better meet its requirements. In addition, a notable feature of ...

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Problems solved by technology

[0006] However, the TFT prepared by the above-mentioned MILC process still has a large leakage current. The main reason for this problem is the lateral grain boundary formed by the interface between the MILC and the MIC at both ends of the channel and the crystallization of the MILC in the channel region. Transverse grain boundaries between grains and grains, these areas have higher nickel content

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