Thin film transistor and manufacturing method thereof

Abstract

The invention discloses a thin film transistor and a manufacturing method thereof. Through carrying out annealing treatment on a substrate on which a metal induced layer is formed, metal induced crystallization can be realized for preparing a bottom gate type low-temperature polycrystalline silicon thin film transistor, and a light shield layer adopted in the manufacturing of a top gate type thin film transistor is omitted, thereby saving the manufacturing cost, simplifying the process, and omitting the polycrystalline silicon doping step through metal induced crystallization. In addition, amorphous silicon is converted into the polycrystalline silicon through metal induced crystallization, and the polycrystalline silicon undergoes a composition process to form a first doped region corresponding to an active layer and a second doped region corresponding to a source-drain region, thereby realizing partition of a channel region and the a source-drain region, and ensuring the electrical performance of the thin film transistor. Furthermore, residual metal particles in the channel region due to metal induced crystallization can be removed through etching the first doped region, an off-state current of the device is decreased, the problem of metal particle residual is solved, and the good electrical performance of the device is ensured.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a manufacturing method of a thin film transistor and the thin film transistor. Background technique [0002] Currently, display devices such as liquid crystal display panels (LCD, Liquid Crystal Display), electroluminescence (EL, electroluminescence) display panels, and electronic paper are well known. These display devices have a thin film transistor (TFT, Thin Film Transistor) that controls the switching of each pixel. Generally, such as figure 1 As shown, the structure of the thin film transistor mainly includes: a light-shielding layer 1, a buffer layer 2, an active layer 3, a gate insulating layer 4, a gate 5, a source 6 and a drain 7 located on a substrate; wherein, the active The layer is made of polysilicon material, and the light-shielding layer is used to block the influence of external light on the polysilicon material, prevent the active layer from generating photo...

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Problems solved by technology

[0004] Embodiments of the present invention provide a method for manufacturing a thin film transistor and a thin film transistor, which are used to solve the problems in the prior art that the film layer structure of the thin film transistor is relatively complex and the off-state current of the thin film transistor is relatively large

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