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Deposition of conformal films by atomic layer deposition and atomic layer etch

A technology of etchant and adsorption layer, applied in the fields of atomic layer deposition and atomic layer etching deposition conformal film

Active Publication Date: 2016-10-26
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Conventional methods of depositing SiN films may produce overhangs when used to deposit SiN films with high aspect ratio features

Method used

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  • Deposition of conformal films by atomic layer deposition and atomic layer etch
  • Deposition of conformal films by atomic layer deposition and atomic layer etch
  • Deposition of conformal films by atomic layer deposition and atomic layer etch

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Embodiment Construction

[0062] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the presented embodiments. The disclosed embodiments may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail to avoid unnecessarily obscuring the disclosed embodiments. While the disclosed embodiments will be described in conjunction with specific embodiments, it will be understood that no limitation to the disclosed embodiments is intended.

[0063] The implementations disclosed below describe the deposition of materials on substrates such as wafers or other workpieces. Workpieces can be of various shapes, sizes, and materials. In addition to semiconductor wafers, other workpieces that may be used in implementations of the present disclosure include various items such as printed circuit boards and the like. The process and apparatus can be used in the manufact...

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Abstract

The invention relates to deposition of conformal films by atomic layer deposition and atomic layer etch. Methods for depositing conformal films using a halogen-containing etchant during atomic layer deposition are provided. Methods involve exposing a substrate to a halogen-containing etchant such as nitrogen trifluoride between exposing the substrate to a first precursor and exposing the substrate to a second plasma-activated reactant. Examples of conformal films that may be deposited include silicon-containing films and metal-containing films. Related apparatuses are also provided.

Description

technical field [0001] The present invention relates generally to the field of semiconductors, and in particular to the deposition of conformal films by atomic layer deposition and atomic layer etching. Background technique [0002] Fabrication of devices, such as semiconductor devices, can involve the deposition of various dielectric, conductive, and semiconducting films in or over raised or recessed features on a substrate. Deposition of films conformal to the underlying substrate topography can be challenging, especially as aspect ratios of features increase and critical dimensions decrease. [0003] One example of a film that can be used in device fabrication is silicon nitride (SiN). Silicon nitride thin films have unique physical, chemical and mechanical properties and are therefore used in a variety of applications. For semiconductor devices, for example, SiN films may be used in diffusion barriers, gate insulators, sidewall spacers, encapsulation layers, strained f...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/311H01L21/67C23C16/34
CPCC23C16/345H01L21/0217H01L21/0228H01L21/31138H01L21/67069C23C16/45527H01J37/32082H01L21/67201H01L21/67207H01L21/02211H01L21/02274C23C16/45544C23C16/505C23C16/45536H01J37/32091C23C16/325C23C16/401H01L21/02208H01L21/28194H01L21/3065H01L21/31116H01L21/32136C23C16/52H01J2237/332H01J2237/334
Inventor 米卡尔·达内克乔恩·亨利谢恩·唐
Owner LAM RES CORP
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