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Electric single photon source device and preparation method thereof

A single-photon source and device technology, applied in the field of electro-induced single-photon source devices and their preparation, can solve the problems of high requirements restricting the development and application of electro-induced single-photon sources, process and experimental equipment, achieve small diameter, avoid process Steps, the effect of reducing the area

Inactive Publication Date: 2016-11-09
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI +1
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Problems solved by technology

[0006] The above-mentioned method for realizing the electrosingle photon source device has very high requirements on the process and experimental equipment, which restricts the development and application of the electrosynthetic single photon source

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  • Electric single photon source device and preparation method thereof
  • Electric single photon source device and preparation method thereof
  • Electric single photon source device and preparation method thereof

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Embodiment Construction

[0023] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0024] An embodiment of the present invention provides an electro-single photon source device, such as Figure 1(a) , 1(b) As shown, the electro-single photon source device includes: a substrate 2; a lower electrode 1 is formed on the lower surface of the substrate 2; a microcolumn structure for generating single photons is formed on the upper surface of the substrate 2; The column filling 8; the ohmic contact layer 9 is formed on the micro column structure and the micro column filling 8, and forms an ohmic contact with the micro column structure; the upper electrode 10 is formed on the ohmic contact layer, and forms an ohmic contact with it. With this structure, since the scale of the ohmic layer is larger than that of ...

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Abstract

An electro-single photon source device and a preparation method thereof, the electro-single photon source device comprising a substrate; a micro-column structure arranged on one side of the substrate; micro-column fillers formed on the periphery of the side walls of the micro-column structure , whose height is not higher than the height of the microcolumn structure; the ohmic contact layer covers the microcolumn structure and the microcolumn filler, and forms ohmic contact with the microcolumn structure; the upper electrode is arranged on the ohmic contact layer; and the lower electrode is formed on On the other side of the substrate, the preparation method adopts the method of preparing an ohmic contact layer and forming it between the microcolumn structure and the upper electrode, and has low requirements on technology and equipment.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to an electroinduced single photon source device and a preparation method thereof. Background technique [0002] A single photon source refers to a single photon of a fixed frequency emitted at a fixed time interval. A high-brightness and stable single-photon source, as a non-classical light source, has many applications in quantum information and many other fields, such as: random number generator, weak absorption measurement, linear optical calculation, quantum key distribution and quantum storage, etc. . [0003] Self-organized quantum dots can confine the carriers in three dimensions, so that the energy of the carriers can be quantized in three dimensions and have discrete energy levels, showing some shell-filling characteristics similar to "atoms", which are called "atoms". "Artificial atom", is considered to be the most potential single photon source. The emission wavel...

Claims

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Application Information

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IPC IPC(8): H01S5/34
CPCH01S5/34
Inventor 马奔陈泽升尚向军倪海桥牛智川
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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