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A kind of preparation method of nanowire

A technology of nanowires and glass tubes, applied in the field of nanowires, can solve the problems of inability to guarantee the uniformity of the diameter of nanowires, and achieve the effects of uniform and controllable diameters and simple and easy preparation methods.

Active Publication Date: 2018-07-13
浙江仁丰科技有限公司
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  • Description
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Problems solved by technology

[0003] At present, the preparation methods of nanowires include suspended method, vapor phase growth method, deposition method, template method, etc., but in actual use, it is found that the length of nanowires prepared by these methods is usually only tens of microns, and there are still many problems in the preparation process. Nanoparticles may be generated, and the uniformity of nanowire diameter is not guaranteed

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  • A kind of preparation method of nanowire
  • A kind of preparation method of nanowire

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preparation example Construction

[0021] as attached Figure 1-2 The preparation method of a nanowire described in the present invention includes the following steps:

[0022] Step 1: Put the metal or semiconductor material into the bottom of the glass tube;

[0023] Step 2: Place the bottom of the glass tube in the center of the heater to heat the bottom of the glass tube;

[0024] Step 3: When the glass tube at the bottom is softened and the material in the glass tube is melted, the microfilament is pulled out from the bottom of the softened glass tube to obtain a glass-coated wire with a wire core diameter A;

[0025] Step 4: placing the glass-coated wire obtained in step 3 in bundles in the glass tube, and then repeating steps 2 and 3 to obtain a glass-coated wire with a core diameter of B, and the value of B is smaller than A;

[0026] Step 5: Design the number of wire drawing passes according to actual needs, repeat steps 2 and 3, and finally obtain a glass-coated nanowire wire with a core diameter of ...

Embodiment 1

[0030] The material used in this embodiment is silver, and the preparation steps are as follows: first put 2g of silver small pieces into the bottom of a Pyrex high borosilicate glass tube with an inner diameter of 8mm and a wall thickness of 1mm, place the bottom of the glass tube on the center of the heater, and place the bottom of the glass tube on the bottom of the glass tube. Tube bottom heating; if attached figure 1 As shown, when the temperature is heated to about 1000˚C, the glass tube at the bottom softens and the silver in the glass tube melts. At this time, the microfilament is pulled out from the bottom of the softened glass tube with a glass rod prepared in advance to obtain the first The glass-coated wire with a wire core diameter of about 35 μm after wire drawing is passed; then the glass-coated wire is cut into microwires with a length of 10 cm, and 500 bundles of the above-mentioned microwires are placed in a Pyrex high borosilicate glass tube with an inner dia...

Embodiment 2

[0032] The material used in this embodiment is germanium, a semiconductor material, and the preparation steps are as follows: put 1.5g of germanium small blocks into the bottom of a Pyrex high borosilicate glass tube with an inner diameter of 8 mm and a wall thickness of 1 mm, and place the bottom of the glass tube at the center of the heater. Heat is applied to the bottom of the glass tube. as attached figure 1 As shown, when the temperature is heated to about 1000˚C, the glass tube at the bottom softens and the germanium in the glass tube melts. At this time, the microfilament is pulled out from the bottom of the softened glass tube with a glass rod prepared in advance, and the first The glass-coated wire with a wire core diameter of about 42 μm after wire drawing is passed; then the glass-coated wire is cut into microfilaments with a length of 10 cm, and 500 bundles of the above-mentioned microfilaments are placed in a Pyrex high borosilicate glass tube with an inner diamet...

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Abstract

The invention relates to a method for preparing nanowires. The preparation method is as follows: the first pass is to place metal or semiconductor materials at the bottom of the glass tube, and heat the bottom of the glass tube. When the material in the glass tube melts and the glass tube at the bottom softens, Pull out the microfilament from the bottom of the softened glass tube to obtain a glass-coated wire with a core diameter of A; the second pass is to place the above-mentioned glass-coated wire in bundles in the glass tube, and then repeat the first pass The second process is to obtain a glass-coated wire with a core diameter of B, and the value of B is smaller than A, and then design the number of wire drawing passes according to actual needs, and finally obtain a glass-coated nanowire with a core diameter of C, and C The value of B is smaller than that of B. The third pass is to erode the surface glass of the silk material in hydrofluoric acid to obtain one-dimensional metal or semiconductor nanowires. The invention is simple and easy, and can prepare nanowires of various material components. Moreover, the diameter of the prepared nanowire is uniform and controllable, and is applied in sensors and electronic industrial products.

Description

technical field [0001] The invention belongs to the technical field of nanowires, in particular to a preparation method of nanowires. Background technique [0002] Nanowires are one-dimensional nanomaterials with quantum size effects, surface effects, quantum tunneling effects, dielectric confinement effects, etc., resulting in different macroscopic properties such as force, heat, light, electricity, and magnetism that are different from conventional bulk materials. Due to the advantages of high mechanical strength and large specific surface area, nanowires have shown broad application prospects in catalysts, solar energy conversion, and flexible touch screens. [0003] At present, the preparation methods of nanowires include suspended method, vapor phase growth method, deposition method, template method, etc., but in actual use, it is found that the length of nanowires prepared by these methods is usually only tens of microns, and there are still many problems in the prepar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F1/02B22F9/06B82Y40/00
CPCB82Y40/00B22F9/06B22F1/0547B22F1/16
Inventor 赵杨勇李慧
Owner 浙江仁丰科技有限公司