Method and system for measuring saturation current of element

A saturation current and component technology, applied in the field of failure analysis of semiconductor devices, can solve the problems of misjudgment of abnormal analysis results, poor accuracy of saturation current value, failure analysis can not continue, etc., to achieve the effect of good data accuracy

Active Publication Date: 2016-11-16
WUHAN XINXIN SEMICON MFG CO LTD
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Problems solved by technology

Especially when the channel resistance of the component is small (usually 100-1000 Ω), the resistance value of the probe itself (100 Ω) and the contact resistance value are relatively larger than the channel resistance value, so the impact on the final measurement result is more obvious. The accuracy of the measured saturation current value is poor, which affects the misjudgment of the abnormal analysis results, making the failure analysis unable to continue

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  • Method and system for measuring saturation current of element
  • Method and system for measuring saturation current of element

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Embodiment Construction

[0032] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. Of course, the present invention can also have other embodiments besides these detailed descriptions.

[0033] The method for measuring the saturation current of a component of the present invention applies a voltage identical to that of the component to the gate (Gate) of the component to convert the voltage between the source (Source) and the drain (Drain) of the component to The channel is fully turned on; then a variable current is applied across the channel, and the voltage difference across the channel is detected using a nanoprobe station (Nanoprober); when the voltage difference across the channel reaches the drain operating voltage, read At this time, the current value applied to the channel is the saturation current value of the component.

[0034] The measurement method and measurement system of the present invention w...

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Abstract

The invention relates to the technical field of semiconductor device failure analysis, and especially relates to a method and system for measuring a saturation current of an element. The method comprises the steps: providing a probe bench which comprises an adsorption chuck, an electric monitor, and a plurality of probes; putting one element on the adsorption chuck, and enabling the element to be electrically connected with the electric monitor; enabling the probe bench to apply one fixed voltage to a grid electrode of the element through employing the first probe, and applying variable currents at two ends of a trench of the element through employing the second and third probes; and monitoring the variable currents at two ends of the trench through employing the electric monitor.

Description

technical field [0001] The invention relates to the technical field of failure analysis of semiconductor devices, in particular to a method and system for measuring saturation current of components. Background technique [0002] In the field of semiconductors, when performing failure mode analysis on components, it is necessary to use probes to test the current characteristics of components to measure the saturation current of components. The existing method of measuring the saturation current is to use three probes to connect to the three terminals of Gate / Source / Drain (gate / source / drain) of the component, fix the voltage at both ends of Source / Drain, and scan the voltage at the Gate terminal. At the same time, detect the current at the Drain terminal to obtain the I d —V g (drain current - gate voltage) curve. When the Gate terminal voltage is applied to the operating voltage, the obtained Drain terminal current value is the saturation current of the component. The cur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R19/00
CPCG01R19/00
Inventor 汤光敏张顺勇高慧敏卢勤
Owner WUHAN XINXIN SEMICON MFG CO LTD
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