Graphene field effect transistor based terahertz detector and preparation method therefor

Abstract

The invention provides a graphene field effect transistor based terahertz detector and a preparation method therefor. The detector comprises a gate electrode, a substrate layer, an insulating layer, a metal electrode layer and a graphene channel layer from the bottom up, wherein the metal electrode layer comprises a metal electrode array, and a source electrode and a drain electrode which are positioned on the two sides of a metal pattern array; the metal electrode array comprises multiple metal electrodes which are periodically arranged at intervals; the metal electrodes, the source electrode and the drain electrode are the same in thickness; the graphene channel layer is formed on the metal electrode layer; and the graphene channel layer fully covers the metal electrode array and at least partially covers the source electrode and the drain electrode. By adoption of the way, the absorptivity of the detector on terahertz radiation can be improved.

Description

technical field [0001] The invention relates to the technical field of terahertz detection, in particular to a graphene field-effect transistor-based terahertz detector and a preparation method thereof. Background technique [0002] Terahertz (Terahertz) frequency band is located between infrared and microwave, and generally refers to electromagnetic waves with frequencies in the 0.1-10 THz band. Compared with electromagnetic waves in other frequency bands, terahertz radiation has many unique characteristics, such as pulse width on the order of picoseconds, single pulse frequency bandwidth, low photon energy, and fear of water, and the vibration frequency of many biological macromolecules is in the terahertz frequency band. Many non-polar materials have little absorption of terahertz radiation, etc. Therefore, terahertz technology has great application prospects in military and civilian applications, such as terahertz time-domain spectroscopy technology, terahertz radar, te...

AI Technical Summary

Problems solved by technology

[0005] Due to the high room temperature carrier mobility of graphene (2×10 5 cm 2 / Vs, which is 100 times that of silicon) and a special zero-bandgap structure, using graphene field-effect transistors as terahertz detectors, can realize high-speed and broadband terahertz detectors at the same time, which has great application prospects, but Since the absorption of graphene to terahertz radiation is very low, only 2.3%, which greatly limits the performance of graphene field-effect transistor terahertz detectors, it is urgent to improve the absorption rate of the device to terahertz radiation

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