Method and device for monolithic integration of electroabsorption modulator and side-coupled grating laser
An electro-absorption modulator and lateral coupling technology, which is applied to devices for controlling output parameters of lasers, lasers, semiconductor lasers, etc., can solve the problems of increasing chip manufacturing costs and increasing buried growth processes, so as to reduce manufacturing costs and optimize devices performance effect
Active Publication Date: 2019-08-09
WUHAN HUAGONG GENUINE OPTICS TECH CO LTD
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However, the BH structure adds a MOCVD buried growth process, which increases the cost of chip production
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[0026] The monolithic integration method and device of the electro-absorption modulator and side-coupled grating laser according to the present invention will be further described below with reference to the drawings and embodiments.
[0027] The following are the best examples of monolithic integration methods and devices for electroabsorption modulators and side-coupled grating lasers described in the present invention, which do not limit the protection scope of the present invention.
[0028] figure 1 A monolithic integration method of an electroabsorption modulator and a side-coupled grating laser is shown, comprising the following steps:
[0029] S1. Select a substrate, and sequentially grow a covering buffer layer on the substrate;
[0030] S2, growing the lower waveguide layer, the multi-quantum well layer and the upper waveguide layer sequentially on the buffer layer; and dividing them into a laser growth area and an electroabsorption modulator growth area;
[0031] ...
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The present invention relates to a monolithic integration method and device of an electroabsorption modulator and a side-coupled grating laser. The method includes the following steps: S1, selecting a substrate, and sequentially growing a covering buffer layer on the substrate; S2, forming a buffer layer on the buffer layer Grow the lower waveguide layer, the multi-quantum well layer and the upper waveguide layer in sequence; and divide it into a laser growth region and an electroabsorption modulator growth region; S3, sequentially grow a stop layer, a cladding layer and a contact layer above the upper waveguide layer; S4, Fabricate ridge waveguides, isolation regions and contact strips in sequence on the contact layer; S5, fabricate laser gratings; S6, fabricate P-face electrodes, N-face electrodes, and cut the substrate thin; S7, unstrip, and coat. The ridge waveguide structure is adopted, and the side-coupling grating is used for frequency selection and optical feedback, further reducing the cost of chip production.
Description
technical field [0001] The invention relates to the field of optoelectronic devices, and more specifically relates to a single-chip integration method and device for an electroabsorption modulator and a side-coupling grating laser. Background technique [0002] Due to the excellent characteristics of low driving operating voltage, small size, compact structure, and easy integration, the electroabsorption modulator can be integrated with a semiconductor laser to form a compact and stable integrated light source module, which plays an important role in high-speed optical communication systems. Electroabsorption modulated distributed feedback semiconductor lasers (EMLs) are ideal light sources for large-capacity, long-distance optical communication systems. [0003] EMLs are monolithic integrated devices that integrate distributed feedback lasers and electroabsorption modulators. The epitaxial structure design of a single device of EMLs, the monolithic growth of different funct...
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IPC IPC(8): H01S5/22H01S5/06
CPCH01S5/0602H01S5/22
Inventor 陈鑫韩宇李鸿建
Owner WUHAN HUAGONG GENUINE OPTICS TECH CO LTD