Power amplifier module applied to mobile phone antenna end

Abstract

The invention discloses a power amplifier module applied to a mobile phone antenna end. The power amplifier module comprises a main signal circuit, a main signal bias circuit, an auxiliary signal circuit, an auxiliary signal bias circuit, a power feedback circuit and an output conversion matching circuit. According to the power amplifier module, through utilization of the power feedback circuit, the output power of the auxiliary signal circuit is collected in a dynamic mode, and a sampling voltage is fed back in real time. The bias circuit is adjusted through utilization of the feedback sampling voltage. The problems that in the prior art, the applicable frequency and power ranges of the power amplifier module are very narrow, the compensation effect is greatly influenced by technological parameters, the performance is instable, and moreover, the product repeatability and consistency are difficult to ensure in mass production are solved. The efficiency and the linearity are optimized in the same power range or the same frequency range.

Description

technical field [0001] The invention relates to the field of power amplifiers for mobile phone communication front ends, in particular to a power amplifier module applied to mobile phone antennas. Background technique [0002] The traditional bias circuit of the power amplifier module can be realized by CMOS, BIHEMT, BIFET, or even HBT only technology. The usual design uses a simple current mirror as the skeleton, adopts various structures of loop or open circuit, and independently designs according to the manufacturer's process. optimized, currently common bias circuits such as figure 1 The open bias circuit shown in and figure 2 The loop bias circuit shown in . [0003] In order to improve the linearity of a certain power or a certain narrow band, designers will deliberately introduce RF signals to modulate the power tubes. The usual introduction method is to simply and directly introduce part of the RF signals into the transistors of the bias circuit. The disadvantages...

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Problems solved by technology

[0003] In order to improve the linearity of a certain power or a certain narrow band, designers will deliberately introduce RF signals to modulate the power tubes. The usual introduction method is to simply and directly introduce part of the RF signals into the transistors of the bias circuit. The disadvantages are: Due to the strong pertinence, the applicable frequency and power range of the power amplifier module is very narrow, the compensation effect is greatly affected by the process parameters, and the performance is unstable. At the same time, it is difficult to ensure the repeatability and consistency of the product in mass production.

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