Temperature field controllable aluminum nitride crystal growth device and process

Abstract

The invention belongs to the field of crystal preparation, in particular to an aluminum nitride crystal growth device and a corresponding process. The invention provides an aluminum nitride crystal growth device and process with controllable temperature field, which has the advantages of precise temperature field control and strong operability, and the corresponding growth process developed thereby conforms to the crystallization characteristics of aluminum nitride crystal. The preparation device comprises a top heater, a middle heater, a bottom heater, a top insulation layer, a side insulation layer, a bottom insulation layer, an infrared thermometer, a crucible and a crucible support. The device controls and adjusts the heating power of the top heater, middle heater and bottom heater according to the temperature signals of three different positions in the growth area returned by the three infrared thermometers, which satisfies the appropriate temperature field for the growth of aluminum nitride crystals condition. The invention provides a suitable growth device and an effective and feasible process for preparing a large-size, high-quality aluminum nitride single crystal.

Description

technical field [0001] The invention belongs to the field of crystal preparation, in particular to an aluminum nitride crystal growth device and a corresponding process. Background technique [0002] As one of the typical representatives of the new third-generation semiconductor materials, aluminum nitride crystals have the advantages of direct band gap, wide band gap (6.2 electron volts), and excellent optical, electrical, acoustic, and mechanical properties. The application prospect and inestimable huge economic benefits. Decades of exploration and research have proved that high temperature vapor phase growth is currently the most common and successful method for preparing aluminum nitride crystals. The growth process is a process in which the aluminum nitride material is decomposed and sublimated at a high temperature, and then recrystallized in a low temperature region to form aluminum nitride crystals. Special attention should be paid to the fact that during the proce...

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Problems solved by technology

However, the existing research shows that: the induction heating furnace mainly adjusts the temperature field in the growth area by moving the crucible up and down to change the relative position with the coil, which is difficult to meet the harsh temperature field conditions required for the preparation of aluminum nitride crystals; at the same time , although the existing improved aluminum nitride crystal growth equipment has improved the adjustment ability of the temperature field to a certain extent, it has not yet achieved the precise control requirements of the temperature field required for the crystal growth

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