Temperature field controllable aluminum nitride crystal growth device and process

A growth device and crystal growth technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems that it is difficult to meet the temperature field conditions of aluminum nitride crystals and fail to meet the requirements for precise control of the temperature field, and achieve Accurate temperature field control, feasible process, and strong operability

Inactive Publication Date: 2016-11-23
SHENZHEN UNIV
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Problems solved by technology

However, the existing research shows that: the induction heating furnace mainly adjusts the temperature field in the growth area by moving the crucible up and down to change the relative position with the coil, which is difficult to meet the harsh temperature field conditions required for the preparation of alu

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  • Temperature field controllable aluminum nitride crystal growth device and process

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Example Embodiment

[0020] The invention provides an aluminum nitride crystal growth device and process with a controllable temperature field. An example of the present invention will be given below for further explanation. In this embodiment, such as figure 1 The growth device shown includes a top heater (3), a middle heater (4), a bottom heater (8), a top insulation layer (1), a side insulation layer (2), a bottom insulation layer (9), Infrared thermometer (5), crucible (6) and crucible support (7) are composed. The material of each heater is metal tungsten, the top heater (3) and the bottom heater (8) adopt a mosquito coil disk structure, and the middle heater (4) adopts a mesh cylindrical structure, and the three are coaxial , And the first two positions in the vertical direction can extend into the middle heater (4). The top thermal insulation layer (1), the side thermal insulation layer (2) and the bottom thermal insulation layer (9) all adopt the method of metal total reflection heat shi...

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Abstract

The invention belongs to the field of crystal preparation, in particular to an aluminum nitride crystal growth device and a corresponding process. The invention provides an aluminum nitride crystal growth device and process with controllable temperature field, which has the advantages of precise temperature field control and strong operability, and the corresponding growth process developed thereby conforms to the crystallization characteristics of aluminum nitride crystal. The preparation device comprises a top heater, a middle heater, a bottom heater, a top insulation layer, a side insulation layer, a bottom insulation layer, an infrared thermometer, a crucible and a crucible support. The device controls and adjusts the heating power of the top heater, middle heater and bottom heater according to the temperature signals of three different positions in the growth area returned by the three infrared thermometers, which satisfies the appropriate temperature field for the growth of aluminum nitride crystals condition. The invention provides a suitable growth device and an effective and feasible process for preparing a large-size, high-quality aluminum nitride single crystal.

Description

technical field [0001] The invention belongs to the field of crystal preparation, in particular to an aluminum nitride crystal growth device and a corresponding process. Background technique [0002] As one of the typical representatives of the new third-generation semiconductor materials, aluminum nitride crystals have the advantages of direct band gap, wide band gap (6.2 electron volts), and excellent optical, electrical, acoustic, and mechanical properties. The application prospect and inestimable huge economic benefits. Decades of exploration and research have proved that high temperature vapor phase growth is currently the most common and successful method for preparing aluminum nitride crystals. The growth process is a process in which the aluminum nitride material is decomposed and sublimated at a high temperature, and then recrystallized in a low temperature region to form aluminum nitride crystals. Special attention should be paid to the fact that during the proce...

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Application Information

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IPC IPC(8): C30B29/40C30B23/00
Inventor 武红磊郑瑞生徐百胜梁逸贺姝慜
Owner SHENZHEN UNIV
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