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A growth device capable of realizing single crystal online annealing and its method

A device and single crystal technology, applied in the field of growth equipment for single crystal online annealing, to achieve the effects of high temperature control accuracy, precise temperature field control, and fast heating rate

Active Publication Date: 2019-06-28
珠海鼎泰芯源晶体有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, the current mainstream furnaces can only grow single crystals, and additional annealing furnaces are required for single crystal annealing.

Method used

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  • A growth device capable of realizing single crystal online annealing and its method
  • A growth device capable of realizing single crystal online annealing and its method

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Embodiment Construction

[0029] Embodiments of the single crystal growth equipment capable of in-line annealing and the method thereof according to the present invention will be described below with reference to the accompanying drawings. Those skilled in the art would recognize that the described embodiments can be modified in various ways or combinations thereof without departing from the spirit and scope of the invention. Accordingly, the drawings and description are illustrative in nature and not intended to limit the scope of the claims. Also, in this specification, the drawings are not drawn to scale, and like reference numerals denote like parts.

[0030] Combine below figure 1 and figure 2 This embodiment will be described in detail.

[0031] The single crystal growth equipment for wire annealing described in this embodiment includes:

[0032] see figure 1 According to the present invention, the growth equipment capable of realizing single crystal online annealing includes a furnace body...

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Abstract

The invention provides growth equipment and a method thereof capable of achieving online annealing of a single crystal. The growth equipment comprises a furnace body, a gas charging system, a vacuum system and an exhaust system. The annealing method comprises the following steps: putting a seed crystal, a polycrystalline material and boron oxide into a crucible, growing a single crystal bar by virtue of a vertical gradient temperature method, introducing chlorine after completion of growing, enabling the boron oxide attached to the surface of the single crystal bar to react with the chlorine to obtain a gas which is discharged out of a tank by virtue of a vacuum pump, and meanwhile performing annealing heating process on the single crystal bar to achieve online annealing of a growing single crystal.

Description

technical field [0001] The invention relates to a crystal growth preparation device, in particular to a growth device capable of realizing single crystal on-line annealing and a method thereof for III-V or II-IV compound semiconductor materials. Background technique [0002] After more than half a century of development, my country's artificial crystal material industry has made great achievements with the joint efforts of the majority of scientific and technological workers. It has a high technical level and a large production capacity. Growth equipment - single crystal furnace has also been developed rapidly. [0003] At present, the commonly used single crystal growth method is the vertical gradient solidification method, referred to as the VGF method. In the 1980s, Bell Laboratories in the United States first used the VGF method to prepare group III-V compounds. This method is to place the container containing the indium phosphide polycrystalline raw material vertically ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00C30B33/02
CPCC30B11/003C30B11/006C30B33/02
Inventor 杨翠柏陈丙振方聪
Owner 珠海鼎泰芯源晶体有限公司
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