Flash memory and programming method thereof

A programming method and memory technology, applied in static memory, read-only memory, digital memory information, etc., can solve the problem that the memory cells are not uniform, and achieve the effect of realizing the threshold distribution range and improving the data retention characteristics.

Active Publication Date: 2016-11-23
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the tunnel oxide film or floating gate of the memory cell, there may be variations due to factors such as fluctuations in manufacturing process parameters or changes over time, so all memory cells may not be uniform.

Method used

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  • Flash memory and programming method thereof
  • Flash memory and programming method thereof
  • Flash memory and programming method thereof

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Embodiment Construction

[0107] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, it should be noted that in the drawings, each part is emphasized for easy understanding, and the scale of the actual device (device) is not the same.

[0108] Figure 6 It is a block diagram of the overall structure of the NAND flash memory according to an embodiment of the present invention. Such as Figure 6As shown, the flash memory 100 includes: a memory array 110, formed with a plurality of memory cells arranged in rows and columns; an input / output buffer (buffer) 120, connected to an external input / output terminal I / O; an address register 130, Receive address data from the input / output buffer 120; cache memory (cache memory) 140 keeps the input / output data; controller 150 generates control signals C1, C2, C3, etc., the control signals C1, C2, C3 etc. are based on the command data (command data) from the input / output buffer 120 and external ...

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Abstract

A programming method of an NAND flash memory is provided, for narrowing a distribution width of a threshold voltage. The method includes a step of verification reading for verifying a threshold voltage of a selected memory cell after a programming voltage is applied to a selected word line. The verification reading further includes a step of pre-charging a voltage to a bit line, a step of discharging the pre-charged bit line to a source line, and a step of reading the voltage of the bit line after the discharging step. Regarding the discharge period from starting the discharging of the bit line to starting the read out, the discharge period of the verification reading after the initial programming voltage is applied is set longer than the discharge period of the verification reading after the subsequent programming voltage is applied.

Description

technical field [0001] The invention relates to a non-volatile semiconductor storage device such as a NAND flash memory (flash memory), in particular to a flash memory and a programming method thereof. Background technique [0002] The NAND type flash memory includes a plurality of NAND strings (string), and one NAND string has: a plurality of memory cells (memory cells) connected in series; a source line side selection transistor connected to one end of the memory cells; and A bit line side select transistor connected to the other end of the memory cell. The control gate of each memory cell is connected to the corresponding word line, the select gate line SGS is connected to the gate of the select transistor on the source line side, and the select gate line SGD is connected to the gate of the select transistor on the bit line side. A plurality of these NAND strings are formed along the row direction in the P well, and one P well constitutes one block of the memory cell arr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10G11C16/34
CPCG11C7/12G11C16/0483G11C16/10G11C16/24G11C16/26G11C16/32G11C16/3459
Inventor 白田里一郎
Owner WINBOND ELECTRONICS CORP
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