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Resist Remover Liquid

A stripping solution, resist technology, used in optics, instruments, optomechanical equipment, etc.

Active Publication Date: 2016-12-07
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It should be noted that in Patent Document 4, the formation of the resist film is assumed to be on the aluminum film, but it is not assumed to be on the copper film.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0082] As amines, tertiary alkanol amines are used.

[0083] N-methyldiethanolamine (MDEA) 5.0% by mass

[0084] Two kinds of polar solvents are mixed.

[0085] Propylene glycol (PG) 22.0% by mass

[0086]Diethylene glycol monobutyl ether (BDG) 40.0% by mass

[0087] Water 31.0% by mass

[0088] As additives, homopiperazine and sorbitol are used.

[0089] Homopiperazine 1.0% by mass

[0090] Sorbitol 1.0% by mass

[0091] The above substances were mixed and stirred to prepare the sample resist stripping solution of Example 1.

Embodiment 2

[0093] Compared with Example 1, Example 2 reduces the amount of additives.

[0094] As amines, tertiary alkanol amines are used.

[0095] N-methyldiethanolamine (MDEA) 5.0% by mass

[0096] The polar solvent is obtained by mixing two types.

[0097] Propylene glycol (PG) 22.2% by mass

[0098] Diethylene glycol monobutyl ether (BDG) 40.0% by mass

[0099] Water 31.0% by mass

[0100] As additives, homopiperazine and sorbitol are used.

[0101] Homopiperazine 0.9% by mass

[0102] Sorbitol 0.9% by mass

[0103] The above substances were mixed and stirred to prepare the sample resist stripping solution of Example 2.

Embodiment 3

[0105] Compared with Example 2, Example 3 reduces the amount of additive sorbitol.

[0106] As amines, tertiary alkanol amines are used.

[0107] N-methyldiethanolamine (MDEA) 5.0% by mass

[0108] Two kinds of polar solvents are mixed.

[0109] Propylene glycol (PG) 22.6% by mass

[0110] Diethylene glycol monobutyl ether (BDG) 40.0% by mass

[0111] Water 31.0% by mass

[0112] As additives, homopiperazine and sorbitol are used.

[0113] Homopiperazine 0.9% by mass

[0114] Sorbitol 0.5% by mass

[0115] The above substances were mixed and stirred to prepare the sample resist stripping solution of Example 3.

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PUM

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Abstract

Resist films which have altered through dry etching are tenaciously adherent to the coated surfaces and cannot be completely removed with resist remover liquids for removing resist films formed on copper films. Meanwhile, high-removing-power remover liquids for aluminum films corrode copper films. There has been a desire for a resist remover liquid with which resist films that have been altered by a plasma can be removed and which does not substantially corrode the base irrespective of whether the base is a copper film or an aluminum film. The resist remover liquid is characterized by comprising a tertiary alkanolamine, a polar solvent, water, a cyclic amine, and a sugar alcohol. The remover liquid can remove resist films altered by dry etching, and does not substantially corrode the base irrespective of whether the base is a copper film or an aluminum film.

Description

[0001] This application is a divisional application of the application dated February 17, 2014, the application number 201480059453X, and the invention name "resist stripping solution". technical field [0002] The present invention relates to a stripping solution for stripping a resist used in the manufacture of display devices such as liquid crystals and organic ELs, and semiconductors. More specifically, it relates to a resist stripping solution that can be removed by dry etching. The resist exposed to plasma does not substantially corrode the aluminum film and the copper film. Background technique [0003] In the TFT (Thin Film Transistor) manufacturing process of flat panel displays (FPDs) such as liquid crystals and organic EL (Electro-Luminescence), etching by photolithography is used to form conductive wiring. [0004] In this etching, for example, a resist film is formed on the formed metal film. The resist film is exposed and developed through a pattern mask, so t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42H01L21/311
CPCH01L21/31133G03F7/425
Inventor 渊上真一郎铃木靖纪有富礼子児玉明里五十岚轨雄坂田俊彦
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD