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R (radius) value variable wafer edge chamfering method

A wafer and chamfering technology, which is applied to machine tools, grinders, electrical components and other directions suitable for grinding the edge of workpieces, can solve the problems of uncontrollable, difficult to realize the whole process control of wafers, and not provided to the outside world, so as to reduce the depth, Beneficial effect of wafer edge quality control

Active Publication Date: 2016-12-21
CHINA ELECTRONICS TECH GRP NO 46 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above process is automatically realized by the chamfering machine, and the specific realization process belongs to the core control elements of the chamfering machine manufacturer and is not provided to the outside world.
The manufacturer of the chamfering machine cannot effectively control the above process, so it is difficult to realize the whole process control of the wafer

Method used

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  • R (radius) value variable wafer edge chamfering method
  • R (radius) value variable wafer edge chamfering method
  • R (radius) value variable wafer edge chamfering method

Examples

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Embodiment Construction

[0014] Taking a 6-inch silicon single wafer with a thickness of 750 μm as an example, the implementation process of this patent is described.

[0015] Step 1. Grinding wheel production. Design and manufacture grinding wheel grooves with three R values ​​according to the thickness of the semiconductor wafer. The radius R1 of the first groove is determined by the thickness T of the wafer and the width D1 of the processing surface of the first groove. The relationship is: , the radius Rn of the remaining two grooves is determined by the thickness of the wafer T, the width Dn of the processing surface of the remaining two grooves and the half angle θ of the grooves. The relationship is: , the distance between the center of each groove and the circumferential surface of the grinding wheel is 0mm for the first groove, and Rn for the rest of the grooves - 1- Rn mm, therefore, the basic shape of each groove bottom is: the first groove D1=205.847μm, T=750μm R1 =444.5μm, the distance ...

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Abstract

The invention relates to an R (radius) value variable wafer edge chamfering method. The method comprises the steps that firstly, an abrasive wheel is designed, the abrasive wheel with three R values is designed according to the thickness of a semiconductor wafer, and other grooves can be designed as required; secondly, the abrasive wheel is mounted on a full-automatic chamfering machine; thirdly, the groove with the radius being R1 is used for chamfering the wafer for primary edge forming; the groove with the radius being R2 and the half angle being theta is used for chamfering the wafer for secondary edge forming; and finally, the groove with the radius being R3 and the half angle being theta is used for chamfering the wafer for final edge forming. The method has the technical effects that the depth of an edge affected layer of the silicon wafer is effectively reduced, the slow change of the subsurface zone of the waste is achieved, and the waste edge quality control is facilitated.

Description

technical field [0001] The invention relates to an edge chamfering method of a semiconductor material, in particular to an edge chamfering method of a variable R value wafer. Background technique [0002] The edge chamfering process is one of the standard processes in the crystal processing of semiconductor materials. It is mainly used to realize the rounding of the edge of the wafer. After melting, the edge of the wafer is no longer sharp, which can improve the safety of the processing process. At present, the international mainstream chamfering machines are mainly Japanese chamfering machines produced in Japan, and some domestic manufacturers also produce chamfering machines. These chamfering machines have a common feature, the process setting is carried out according to the amount of circle removal (or the amount of removal in the radial direction). On the center plane of the wafer, the amount of circle removal on the entire circumference is the same; but in the directio...

Claims

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Application Information

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IPC IPC(8): B24B9/06H01L21/02
CPCB24B9/065H01L21/02021
Inventor 杨洪星刘玉岭范红娜韩焕鹏何远东陈晨陶术鹤赵权杨静
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST