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Semiconductor element and its manufacturing method

A manufacturing method and semiconductor technology, which are applied in the fields of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as affecting the structure of the semiconductor component 10 and damage to the nitride layer 152.

Active Publication Date: 2019-06-18
PIXART IMAGING INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unfortunately, due to sulfur hexafluoride (SF 6 ) will attack the nitride layer 152 of the stack cover layer 15, such as Figure 1B As shown by the middle arrow, this will damage the nitride layer 152 and affect the structure of the semiconductor element 10

Method used

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  • Semiconductor element and its manufacturing method
  • Semiconductor element and its manufacturing method
  • Semiconductor element and its manufacturing method

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Embodiment Construction

[0062] The aforementioned and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of a preferred embodiment with reference to the drawings. The drawings in the present invention are all schematic, mainly intended to show the functional relationship between each device and each component, and the shapes, thicknesses and widths are not drawn to scale.

[0063] Please refer to Figures 2A-2F, which shows a schematic cross-sectional flow chart of the first embodiment of the present invention. It is worth noting that this embodiment is intended to illustrate the main features of the present invention. Therefore, in the general standard semiconductor device manufacturing methods, such as lithography process steps (not shown) and ion implantation process steps (figure not shown) or other steps irrelevant to the focus of the present invention are well known to those skilled in the art and will not be ...

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Abstract

The invention provides a manufacturing method of a semiconductor element. The manufacturing method of the semiconductor element comprises the steps that a substrate is provided; a semiconductor stack structure is formed on the substrate; at least a part of stack cover layer is formed on the semiconductor stack structure, wherein at least a part of the stack cover layer comprises a nitride layer; a part of the nitride layer is removed; all parts of the stack cover layer are completed; a protective layer is formed on the stack cover layer and the protective layer is etched so as to form at least one hole, wherein the nitride layer is not exposed out of the opening; and etching material is piped into the opening to etch the substrate. The invention also provides the semiconductor element formed by the method.

Description

technical field [0001] The invention relates to a semiconductor element and its manufacturing method, in particular to a semiconductor element and its manufacturing method which have stacked covering layers and can protect the nitride layer from being damaged by etching materials. Background technique [0002] Please refer to Figures 1A-1B , which shows a schematic cross-sectional flow diagram of a conventional manufacturing method of a semiconductor element. Such as Figure 1A As shown, in the manufacturing method of the semiconductor element 10 in the prior art, a semiconductor stack structure 19 is formed on the substrate 11 . A stack covering layer 15 is formed on the semiconductor stack structure 19 . The semiconductor stack structure 19 includes a gate structure 13 and a spacer layer 14 . The semiconductor stack structure 19 is formed by forming a shallow trench isolation (shallow trench isolation, STI) structure 12 on the substrate 11 , and forming the gate struct...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/306H01L21/308
CPCH01L21/306H01L21/308
Inventor 孙志铭徐新惠蔡明翰
Owner PIXART IMAGING INC