No-clean high-temperature electronic soldering flux and preparation method thereof
A no-cleaning, high-temperature technology, applied in the direction of manufacturing tools, welding equipment, metal processing equipment, etc., to achieve the effect of clean cleaning process, full solder joints, and no residue in solder joints
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2017-01-04
- Estimated Expiration
- Not applicable · inactive patent
Abstract
Description
technical field
[0001] The invention belongs to the technical field of electronic materials, and in particular relates to a no-cleaning high-temperature electronic flux and a preparation method thereof. Background technique
[0002] Flux is an important part of electronic connection materials. In the electronic packaging process, flux mainly plays the role of "helping welding". The performance of flux plays a key role in achieving a good brazing connection. Therefore, more and more companies pay attention to the selection and application of flux.
[0003] For flux, it is required to have good flux, high insulation and low corrosion. At present, although there are many types of flux, the use of some fluxes will cause the solder joints to be dirty and difficult to clean. At the same time, the residual flux will corrode the solder joints more or less, affecting the connection strength of the solder joints, thus Greatly reduce the quality and reliability of electronic products...
Examples
Embodiment 1
[0025] A no-cleaning high-temperature electronic flux, comprising the following raw materials in parts by weight: 5 parts of bismuth chloride, 3 parts of tin fluorosilicate, 2 parts of tin methanesulfonate, 1 part of titanium dioxide, 1 part of glass fiber reinforced plastic powder, zirconium acetylacetonate 2.4 parts, 6 parts of 1-benzylhydantoin, 3 parts of polyethylene glycol oleate, 2 parts of organic bentonite, 4 parts of decyl glucoside, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate 3 parts of acid, 2 parts of triphenylphosphine ruthenium chloride, 18 parts of diethylene glycol monohexyl ether, 16 parts of dipropylene glycol monomethyl ether, 4 parts of tall oil rosin, 2 parts of N, N-dimethylacetamide 1 part, 1 part of disproportionated potassium abietate, 1 part of methyl monoethanolamine, 2 parts of lauroyl diethanolamine, 3 parts of 1-N-hydroxybenzotriazole, 2 parts of barium dinonylnaphthalenesulfonate.
[0026] The preparation method of the no-cleaning high...
Embodiment 2
[0034] A no-cleaning high-temperature electronic flux, comprising the following raw materials in parts by weight: 11 parts of bismuth chloride, 9 parts of tin fluorosilicate, 6 parts of tin methanesulfonate, 7 parts of titanium dioxide, 4 parts of glass fiber reinforced plastic powder, zirconium acetylacetonate 6 parts, 10 parts of 1-benzylhydantoin, 9 parts of polyethylene glycol oleate, 6 parts of organic bentonite, 9 parts of decyl glucoside, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate 7 parts of acid, 6 parts of triphenylphosphine ruthenium chloride, 28 parts of diethylene glycol monohexyl ether, 25 parts of dipropylene glycol monomethyl ether, 9 parts of tall oil rosin, 8 parts of N, N-dimethylacetamide 5 parts, 5 parts of disproportionated potassium abietate, 4 parts of methyl monoethanolamine, 5 parts of lauroyl diethanolamine, 8 parts of 1-N-hydroxybenzotriazole, 7 parts of barium dinonylnaphthalenesulfonate.
[0035] The preparation method of the no-cleaning...
Embodiment 3
[0043]A no-cleaning high-temperature electronic flux, comprising the following raw materials in parts by weight: 5.6 parts of bismuth chloride, 3.2 parts of tin fluorosilicate, 2.8 parts of tin methanesulfonate, 1.5 parts of titanium dioxide, 1.4 parts of glass fiber reinforced plastic powder, zirconium acetylacetonate 2.8 parts, 6.5 parts of 1-benzylhydantoin, 3.5 parts of polyethylene glycol oleate, 2.5 parts of organic bentonite, 4.2 parts of decyl glucoside, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate 3.5 parts of acid, 2.4 parts of triphenylphosphine ruthenium chloride, 20 parts of diethylene glycol monohexyl ether, 18 parts of dipropylene glycol monomethyl ether, 4.5 parts of tall oil rosin, 2.4 parts of N, N-dimethylacetamide 1.4 parts of disproportionated potassium abietate, 1.6 parts of methyl monoethanolamine, 2.7 parts of lauroyl diethanolamine, 3.6 parts of 1-N-hydroxybenzotriazole, and 2.6 parts of barium dinonylnaphthalenesulfonate.
[0044] The prepara...