The application discloses a preparation method of a cleaning
solution composition after IC
copper process CMP, wherein the cleaning
solution composition comprises: a surfactant, a
wetting agent, an organic
phosphine chelating agent, an organic amine chelating agent, a
quaternary ammonium lye, an
organic solvent, a defoaming agent, a pH
regulator, and the rest is water; the
quaternary ammonium lye is a THEMAH-containing composition directly prepared by the following method, which comprises: taking one or more of
methylamine, methyl
ethanolamine and
methyl diethanolamine as one of raw materials, and reacting with
ethylene oxide without a catalyst silica, and the
reaction temperature is 20-100 DEG C. The application further discloses a preparation method of the
quaternary ammonium lye. The application utilizes the characteristics of reaction self-heat release, is easier to control temperature, is convenient to operate, has lower
energy consumption, has less by-products such as
ethylene glycol in the product without using a catalyst such as silica, and can reduce the risk of
ethylene oxide accumulation. The obtained quaternary ammonium lye containing THEMAH has component content ratios which can directly meet commonly recognized cleaning solution specifications.