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Semiconductor device and failure detection method

A semiconductor and fault technology, applied in the direction of single semiconductor device testing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problem of large IGBT modules

Active Publication Date: 2020-08-28
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Specifically, an IGBT module that receives as much thermal stress as that of the power cycle test has an adequate margin, but this margin is too large for an IGBT module that receives a light load resulting in little thermal stress

Method used

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  • Semiconductor device and failure detection method
  • Semiconductor device and failure detection method
  • Semiconductor device and failure detection method

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0029] A representative embodiment is a method of detecting failure of a power module according to an increase in thermal resistance.

[0030] figure 1 is a flowchart showing a method of detecting a failure of a semiconductor device (power module) according to the first embodiment. figure 2 is a schematic block diagram illustrating the construction of a target power module for fault detection.

[0031] The power module 2 includes a power device Q and a drive circuit 3 , the power device Q is mounted on a metal base 31 for heat dissipation, and the drive circuit 3 is used to drive the power device Q. The power device Q drives a load (not shown) with high power using power supplied from a power source (not shown) and in response to a drive signal input from the drive circuit 3 . In the power module 2, at least one power device Q is used to configure a circuit for driving a load according to the driving system used. The power device Q is, for example, an IGBT, a metal oxide s...

no. 2 example

[0048] As a specific example, the power module 2 is an inverter circuit that controls and drives a load (Load) 12 such as a motor, for example.

[0049] image 3 is a block diagram showing a configuration example of a semiconductor device (power module 2 ) according to the second embodiment. The signal lines include at least one signal wiring, but no bus is shown in the block diagram. This configuration is equivalent to that of other block diagrams or circuit diagrams of the present application. The notation "Q" followed by a power device refers to an individual device, where "Q" alone refers to at least one power device as a whole. In addition, "D" for a diode and "S" for a sensor are similarly expressed. With respect to sensor S, temperature sensor "St", current sensor "Sc" and voltage sensor "Sv" are also accompanied by the symbols "St", "Sc" and "Sv" followed by them in order to identify the individual sensors, while at least one temperature sensor , current sensor and...

no. 3 example

[0066] In the second embodiment, the test sequence is set to supply a predetermined input power Px to the IGBT. In the third embodiment, the test sequence is replaced by any time period in the normal operation of the power module 2 used as the driving time period, the temperature is measured immediately before and after the time period to determine the temperature difference ΔT, the driving time is measured The input power Pz input to the IGBT during the period, and then based on the temperature difference ΔT and the input power Pz to determine whether the thermal resistance θ has exceeded a specified value.

[0067] Figure 10 is a timing chart showing the measurement operation of the input power Pz. The horizontal indicates the time. In the vertical direction, the IGBT gate-emitter voltage VGE, the IGBT collector current IC, the input power Pz, and the temperature T of the drive signal are indicated from the top. Reference symbol VGE designates a drive signal output from ...

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Abstract

To provide a semiconductor device and a failure detection method that obtains a margin smaller than a margin that will be maintained during a failure period predicted by life prediction based on a power cycle test, thereby prolonging a maintenance period for replacement or the like. The semiconductor device includes a power device mounted on a metal base and a drive circuit for driving the power device, and the method detects failure of the semiconductor device in advance based on an increase in thermal resistance between the metal base and the power device. The state of the power device is measured immediately before and after the drive circuit drives the power device. The temperature difference of the power device before and after driving is calculated from the measurement result. An increase in thermal resistance between the metal base and the power device is detected based on the temperature difference and the amount of power input to the power device during the driving period, and based on the increase, failure of the semiconductor device is detected in advance.

Description

[0001] Cross References to Related Applications [0002] The entire disclosure of Japanese Patent Application No. 2015-130666 filed on Jun. 30, 2015, including specification, drawings and abstract, is incorporated herein by reference. technical field [0003] The present invention relates to a semiconductor device and a fault detection method, and in particular, can be used to detect faults of a power semiconductor device in advance. Background technique [0004] In a module including a power semiconductor device (power device) such as a motor drive power module, a failure of a component like a power device during operation frequently causes a large influence. Therefore, components are replaced based on lifetime predictions before failure actually occurs. [0005] Japanese Unexamined Patent Application Publication No. 2011-196703 discloses a power cycle lifetime prediction method in an IGBT module including an insulated gate bipolar transistor (IGBT) as a power device. The...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/30H01L23/36H01L23/3735H02M7/53871H01L2224/48091H01L2224/48227H01L2924/19107H02P29/0241H02P29/68H01L24/16H01L24/29H01L24/32H01L24/48H01L24/73H01L2224/16227H01L2224/291H01L2224/32225H01L2224/73265H01L2924/13055H01L2924/35121H02P27/08H03K19/018507H01L2924/13091H02M1/327H01L2924/00014H01L2924/00012H01L2924/014H01L2924/00H01L29/7395H01L29/866H01L27/0664H01L27/0255H02M7/537H02P29/024
Inventor 尾藤胜利饭岛大辅竹原裕司
Owner RENESAS ELECTRONICS CORP
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