Write-in method of resistive memory device

Abstract

The invention provides a write-in method of a resistive memory device. The method comprises the following steps: receiving logic data, and selecting a corresponding selective storage unit; judging the logic level of the logic data; providing a reset pulse to the selective storage unit in the write-in period when the logic data is the first logic level, and providing a set pulse being smaller than a reference write-in current and having a pulse width being a class moment pulse width to the selective storage unit; and providing the reset pulse to the selective storage unit in the write-in period when the logic data is a second logic level, and providing a set pulse being greater than the reference write-in current and having a pulse width being a class moment pulse width to the selective storage unit. The method can avoid logic level misjudgment in the data reading process, caused by overlapping of read current ranges corresponding to a low resistance state and a high resistance state in high temperature environment.

Description

technical field [0001] The present invention relates to a data writing method, and in particular to a writing method of a resistive memory device. Background technique [0002] Non-volatile memory has the advantage that the stored data will not disappear after power failure, so it is a necessary storage element for many electronic products to maintain normal operation. At present, resistive random access memory (RRAM) is a kind of non-volatile memory actively developed in the industry, which has the advantages of low write operation voltage, short write and erase time, long memory time, It has the advantages of permanent reading, multi-state storage, simple structure and small required area, and has great application potential in future personal computers and electronic devices. [0003] In general, resistive memory can change the width of the filament path according to the magnitude and polarity of the applied pulse voltage. In this way, the resistance value is reversibly...

AI Technical Summary

Problems solved by technology

In this case, the magnitude ranges of the read current corresponding to the two resistance states may overlap, resulting in that when reading data, the stored data of different logic levels may generate the same magnitude of read current, so that it cannot be read correctly. fetch stored data

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