A drive circuit for a mos tube

Abstract

The embodiment of the invention provides an MOS (Metal Oxide Semiconductor) transistor driving circuit. The MOS transistor driving circuit provided by the embodiment of the invention is used for driving a main MOS transistor, and comprises a signal input end, a first branch and a second branch, wherein the first branch and the second branch are connected in parallel and are connected between the signal input end and the main MOS transistor, and the first branch is further connected to a power supply. Through a voltage dividing network provided with the first branch and the second branch, effective control for driving is realized, the driving capacity is improved, and a driving problem caused by existence of intrinsic Miller capacitance of a high-voltage MOS transistor is solved. The driving capacity is improved, so that the loss of the main MOS transistor is reduced, and the efficiency is improved. Meanwhile, direct connection of a P-channel MOS transistor and an N-channel MOS transistor is avoided because of existence of charging and discharging time constants of capacitance of the voltage dividing network provided with the first branch and the second branch, and the driving reliability is greatly improved.

Description

technical field [0001] The invention relates to the technical field of switch circuit drive, in particular, to a drive circuit of a MOS transistor. Background technique [0002] According to the current metal-oxide-semiconductor field effect transistor (MOSFET) drive scheme, especially in high-voltage applications, when driving a MOS tube with a large Miller capacitance, it is easy to cause a drive drop (There is a glitch in the driving signal), and the phenomenon of insufficient driving of the MOS tube. Therefore, an auxiliary source or amplifier must be added to provide a strong level signal, but this increases the size and cost, and it is easy to cause driving delay and cause power loss. Contents of the invention [0003] In view of this, the purpose of the embodiments of the present invention is to provide a driving circuit for a MOS transistor, so as to improve the problem of insufficient driving of a MOS transistor with a large Miller capacitance in the prior art. ...

AI Technical Summary

Problems solved by technology

[0002] According to the current metal-oxide-semiconductor field effect transistor (MOSFET) drive scheme, especially in high-voltage applications, when driving a MOS tube with a large Miller capacitance, it is easy to cause a drive drop (There is a glitch in the drive signal), and the phenomenon of insufficient drive to the MOS tube

Therefore, an auxiliary source or amplifier must be added to provide a strong level signal, but this increases the size and cost, and it is also easy to cause driving delays, resulting in power loss

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