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Light source polarization optimization method and light source-masking-polarization optimization method

An optimization method and light source technology, applied in the semiconductor field, to achieve the effect of effective light source-mask-polarization optimization and quality improvement

Active Publication Date: 2017-01-25
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, sometimes SMO still cannot meet the increasingly stringent critical dimension specifications and needs to further improve the imaging resolution of the lithography system

Method used

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  • Light source polarization optimization method and light source-masking-polarization optimization method
  • Light source polarization optimization method and light source-masking-polarization optimization method
  • Light source polarization optimization method and light source-masking-polarization optimization method

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Embodiment Construction

[0020] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0021] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0022] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the / the" are intended to include...

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Abstract

The invention provides a light source polarization optimization method and a light source-masking-polarization optimization method. The light source polarization optimization method comprises the following steps: dividing a light source into a plurality of source blocks; setting a plurality of polarization states for each source block; calculating polarization configurations of the light source according to the plurality of polarization states of the source block; testing the polarization configurations on a test pattern; choosing the optimal polarization configuration as a final polarization configuration for the light source according to the test, wherein the optimal polarization configuration has a maximum process window for the test pattern. The light source polarization optimization method is implemented after the implementation of light source-masking optimization, so that the effective light source-masking-polarization optimization is achieved, and the optical patterning quality is greatly improved.

Description

technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a light source polarization optimization method and a light source-mask-polarization optimization (source-mask-polarization optimization) method. Background technique [0002] As the complexity of integrated circuits increases, the feature size becomes smaller and smaller. When the feature size of the integrated circuit is close to the system limit of the exposure of the lithography machine, that is, the feature size is close to or smaller than the lithography light source, the layout produced on the silicon wafer will appear obvious distortion. To this end, the lithography system must adopt resolution enhancement technology to improve the imaging quality. [0003] As technology develops toward smaller critical dimensions, conventional optical proximity correction (Optical Proximity Correction, OPC) that only optimizes the mask may not be able to meet the increasi...

Claims

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Application Information

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IPC IPC(8): G03F7/20
Inventor 杜杳隽
Owner SEMICON MFG INT (SHANGHAI) CORP
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