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Fabrication method of array substrate

A manufacturing method and a technology of electrode spacing, which can be used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve the problem of impurity F ions entering thin film transistors.

Active Publication Date: 2017-02-01
KUSN INFOVISION OPTOELECTRONICS
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Problems solved by technology

[0007] In view of this, the present invention provides a method for manufacturing an array substrate, by strengthening the cleaning strength of the film-forming chamber of the array substrate, to solve the problem that the impurity F ions remaining in the film-forming chamber enter the thin film transistor

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Embodiment Construction

[0030] The embodiments of the present disclosure are described below based on the examples, but the embodiments of the present disclosure are not limited to these examples. In the detailed description of the embodiments of the present disclosure below, some specific details are described in detail. Embodiments of the present disclosure can be fully understood by those skilled in the art without the description of these detailed parts. In order to avoid obscuring the essence of the embodiments of the present disclosure, well-known methods, procedures, and procedures are not described in detail. Additionally, the drawings are not necessarily drawn to scale.

[0031] In the process of manufacturing array substrates in the prior art, NF3 gas is used to clean the film forming chamber. After multiple times of NF3 plasma cleaning, after multiple cleanings, impurity F ions will remain in the chamber. At this time , even if the film-forming chamber is flushed with N2 gas, it is diffi...

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Abstract

The invention discloses and provides a fabrication method of an array substrate. The fabrication method comprises the steps of forming a grid metal layer on a substrate; patterning the grid metal layer to form a grid conductor; forming a grid dielectric layer on the grid conductor; performing plasma cleaning; forming an amorphous silicon layer on the grid dielectric layer; doping in the amorphous silicon layer to form a source region and a drain region; and forming an inter-layer protection layer on the amorphous silicon layer, wherein the plasma cleaning comprises cleaning and washing which are alternatively performed for many times. A film forming cavity chamber is adopted, the film forming cavity chamber of the array substrate is generated by many steps of cleaning and washing, impurity F ions in the film forming cavity chamber are cleaned, so that the environmental purity of the film forming cavity chamber is improved, and the impurity F ions are prevented from entering a thin film transistor to cause current leakage.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing an array substrate. Background technique [0002] A liquid crystal display device is a display device that uses the phenomenon that the alignment direction of liquid crystal molecules changes under the action of an electric field to change the light transmittance of a light source. Liquid crystal display devices have been widely used in mobile terminals such as cell phones and large-sized display panels such as flat TVs. [0003] figure 1 and 2 A schematic structural diagram and an equivalent circuit diagram of a liquid crystal display device according to the prior art are respectively shown. The liquid crystal display device 100 includes a first glass substrate 110 and a second glass substrate 210 , the first surface of the first glass substrate 110 is opposite to the first surface of the second glass substrate 210 . A plurality o...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/77
CPCH01L21/02057H01L21/02082H01L21/77
Inventor 张钦张伟
Owner KUSN INFOVISION OPTOELECTRONICS
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