Unlock instant, AI-driven research and patent intelligence for your innovation.

Manufacturing method of substrate for wiring

A manufacturing method and substrate technology, which is applied in the manufacture of printed circuits, the formation of electrical connections of printed components, electrical components, etc., can solve the problems of reduced reliability of wiring substrates, achieve the effects of reduced consumption, smooth electrodes, and shortened plating time

Active Publication Date: 2018-07-24
KIYOKAWA PLATING INDS CO LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the case of the above-mentioned operation, voids called voids may be generated in the metal layer filled by plating in the through-holes of the insulating substrate, so that there is a disadvantage that the reliability of the wiring board is significantly lowered.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of substrate for wiring
  • Manufacturing method of substrate for wiring
  • Manufacturing method of substrate for wiring

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0114] Next, the first invention and the second invention will be described in more detail based on examples, but the first invention and the second invention are not limited to the examples.

[0115] [the first invention]

manufacture example 1

[0117] As the insulating substrate, a silicon substrate (diameter: 150 mm, thickness: 300 μm) provided with 50 through-holes having a diameter of 50 μm on a straight line at equal intervals of 500 μm was used. A 50-nm-thick titanium layer was formed as a seed layer on one surface of the silicon substrate using a load-lock sputtering device (manufactured by ULVAC, model: CS-200), and then a 300-nm-thick copper layer was formed. formed in the seed layer figure 1 In the protruding portion 3 a shown in (b), the length L of the protruding portion 3 a is about 20 μm, and the thickness D is about 150 nm.

Embodiment I-1

[0119] Using the silicon substrate having the seed layer obtained in Production Example 1, a masking film (film made of polyethylene with a thickness of 30 μm) was pasted on the surface on which the seed layer was formed, thereby covering the surface on which the seed layer was formed with the masking film. .

[0120] Next, use the figure 1In the electrolytic cell 6 of the form shown in (d), the silicon substrate is placed in such a manner that the surface opposite to the surface on which the seed layer is formed of the mask film-coated silicon substrate and the anode made of copper face each other with a gap of about 25 mm. And the anode is immersed in the copper sulfate plating bath (sulfuric acid 150g / L, copper sulfate 150g / L, chlorine 0.2mL / L) at 25 ℃, with a current density of 2A / dm 2 Electrolytic copper plating is performed to form a metal layer in the through hole.

[0121] After forming the copper layer as the metal layer in the through hole of the silicon substrate ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a method of manufacturing a substrate for wiring, which is a method for efficiently manufacturing a substrate for wiring using an insulating substrate (1) having a through hole (2), characterized in that the insulating substrate (1) A seed layer (3) is formed on one surface, and the face on which the seed layer (3) is formed is covered with a masking film (4), and the anode ( 5) Arranging the insulating substrate (1) and the anode (5) so as to face each other and performing electroplating to form a metal layer (8) in the through hole (2), and then removing the masking film (4).

Description

technical field [0001] This invention relates to the manufacturing method of the board|substrate for wiring. More specifically, the present invention relates to a method of manufacturing a wiring board that can be suitably used as, for example, a wiring board for mounting a semiconductor chip or the like. Background technique [0002] In general, when manufacturing a substrate for wiring, an insulating substrate such as a resin plate having a through hole is used, the insulating substrate is immersed in a plating bath, and electroplating is performed to fill the through hole with metal ( See, for example, Patent Document 1 and Patent Document 2). However, in the case of the above-mentioned operation, voids called voids may be generated in the metal layer filled by plating in the through-holes of the insulating substrate, which has a disadvantage that the reliability of the wiring board is significantly lowered. [0003] As a method of manufacturing a wiring board in which ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H05K3/40
CPCH05K1/113H05K3/423H05K2201/09563H05K2203/1476H05K3/42
Inventor 本多正二郎春木阳介清川肇
Owner KIYOKAWA PLATING INDS CO LTD