Silicon carbide deposition apparatus and air inlet device thereof

Abstract

The invention provides an inlet device of a silicon carbide deposition apparatus comprising an MTS reservoir, a mixing tank and a buffer tank. The MTS reservoir is provided with a hydrogen input conduit, the hydrogen input conduit opening extends below the MTS liquid level, the top of the MTS reservoir is also provided with a reservoir exhaust port, the reservoir exhaust port is connected to a first air inlet of the mixing tank through a first pipe, the mixing tank is provided with a second air inlet, the second air inlet is used fir inputting argon, the mixing tank is provided with a mixing tank exhaust port, the mixing tank exhaust port is connected with the inlet of the buffer tank through a second pipe, and the buffer tank is provided with a buffer tank exhaust port. The buffer tank exhaust port is connected with a furnace of the silicon carbide deposition apparatus through a third pipe. The air inlet device of the invention sets the mixing tank and the buffer tank. After the process gas passes through the two tanks, the pressure fluctuation can be reduced and the pressure of the gas can be controlled more easily.

Description

technical field [0001] The invention belongs to the field of chemical vapor deposition equipment, and in particular relates to an air intake device of silicon carbide deposition equipment. Background technique [0002] Vapor deposition technology is to use the physical and chemical processes that occur in the gas phase to form functional metal, non-metal or compound coatings on the surface of the workpiece. Chemical vapor deposition refers to the process of introducing the gaseous reactant or liquid reactant vapor containing the film elements and other gases required for the reaction into the reaction chamber, and a chemical reaction occurs on the surface of the substrate to form a film. [0003] Silicon carbide deposition equipment is used for anti-oxidation coating and substrate modification on the surface of materials using trichloromethylsilane (MTS) as the gas source. In order to achieve a good deposition effect, the flow and pressure of the MTS must be precisely contr...

AI Technical Summary

Problems solved by technology

The existing silicon carbide deposition equipment intake device uses hydrogen and argon to mix in the MTS liquid storage tank, and then carries the MTS gas directly into the furnace body. The gas fluctuates greatly, and the cracking gas flow is unstable, resulting in unstable deposition rate. Uneven coating, poor bonding of coating materials

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