Silicon carbide deposition apparatus and air inlet device thereof

A technology of air intake device and deposition equipment, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of uneven coating, unstable deposition speed, poor adhesion of coating materials, etc.

Active Publication Date: 2017-02-22
湖南顶立科技股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The existing silicon carbide deposition equipment intake device uses hydrogen and argon to mix in the MTS liquid storage tank, and then carries the MTS gas directly into th

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  • Silicon carbide deposition apparatus and air inlet device thereof

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Embodiment Construction

[0013] In order to enable those skilled in the art to better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described The embodiments are only some of the embodiments of the present application, but not all of them.

[0014] Please refer to figure 1 The air intake device of the silicon carbide deposition equipment provided in this embodiment includes an MTS liquid storage tank 1, a mixing tank 2 and a buffer tank 3. The MTS liquid storage tank 1 is provided with a hydrogen gas input pipeline 11, and the opening of the hydrogen gas input pipeline 11 extends into Below the MTS liquid level, the top of the MTS liquid storage tank 1 is also provided with a liquid storage tank exhaust port 12, and the liquid storage tank exhaust port 12 is connected to the f...

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Abstract

The invention provides an inlet device of a silicon carbide deposition apparatus comprising an MTS reservoir, a mixing tank and a buffer tank. The MTS reservoir is provided with a hydrogen input conduit, the hydrogen input conduit opening extends below the MTS liquid level, the top of the MTS reservoir is also provided with a reservoir exhaust port, the reservoir exhaust port is connected to a first air inlet of the mixing tank through a first pipe, the mixing tank is provided with a second air inlet, the second air inlet is used fir inputting argon, the mixing tank is provided with a mixing tank exhaust port, the mixing tank exhaust port is connected with the inlet of the buffer tank through a second pipe, and the buffer tank is provided with a buffer tank exhaust port. The buffer tank exhaust port is connected with a furnace of the silicon carbide deposition apparatus through a third pipe. The air inlet device of the invention sets the mixing tank and the buffer tank. After the process gas passes through the two tanks, the pressure fluctuation can be reduced and the pressure of the gas can be controlled more easily.

Description

technical field [0001] The invention belongs to the field of chemical vapor deposition equipment, and in particular relates to an air intake device of silicon carbide deposition equipment. Background technique [0002] Vapor deposition technology is to use the physical and chemical processes that occur in the gas phase to form functional metal, non-metal or compound coatings on the surface of the workpiece. Chemical vapor deposition refers to the process of introducing the gaseous reactant or liquid reactant vapor containing the film elements and other gases required for the reaction into the reaction chamber, and a chemical reaction occurs on the surface of the substrate to form a film. [0003] Silicon carbide deposition equipment is used for anti-oxidation coating and substrate modification on the surface of materials using trichloromethylsilane (MTS) as the gas source. In order to achieve a good deposition effect, the flow and pressure of the MTS must be precisely contr...

Claims

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Application Information

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IPC IPC(8): C23C16/455C23C16/32
CPCC23C16/325C23C16/45512
Inventor 戴煜胡祥龙周岳兵
Owner 湖南顶立科技股份有限公司
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