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A Reverse Bias Voltage Regulation Circuit Applied to Array Avalanche Diodes

A technology of avalanche diode and reverse bias voltage, which is applied in the direction of instruments, etc., can solve the problems of increasing the application cost of array SPAD, inability to effectively and flexibly adjust the non-uniformity of avalanche breakdown voltage, etc., and achieve the reduction of chip area and dynamic power consumption , save chip area and power consumption, and achieve consistent detection sensitivity

Active Publication Date: 2018-10-30
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this compensation is only for the avalanche breakdown voltage caused by temperature changes, and cannot effectively and flexibly adjust the avalanche breakdown voltage non-uniformity caused by material defects and process errors, and the external chip greatly increases the application cost of the array SPAD

Method used

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  • A Reverse Bias Voltage Regulation Circuit Applied to Array Avalanche Diodes
  • A Reverse Bias Voltage Regulation Circuit Applied to Array Avalanche Diodes
  • A Reverse Bias Voltage Regulation Circuit Applied to Array Avalanche Diodes

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Embodiment Construction

[0025] The present invention will be further described below in conjunction with the accompanying drawings.

[0026] In the application of SPAD arrays, due to material defects and manufacturing process deviations, it is necessary to adjust the reverse bias voltage of SPAD detectors to ensure the same overbias voltage and reduce the impact of avalanche breakdown voltage non-uniformity. The cathode of each SPAD detector in the SPAD array is connected to the common power supply V POWER , the reverse bias voltage sharing module is used as a common part to generate N voltage signals, and then the data register and voltage selector select a certain voltage signal to the anode of a pixel SPAD detector according to actual needs, and change the reverse bias voltage of the SPAD detector , so that the overbias voltage of each SPAD detector is consistent, and thus the gain of the SPAD array is consistent. When light of the same intensity is incident on the SPAD array, the detection sensi...

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Abstract

The invention discloses a reversed bias voltage adjusting circuit applied to an array avalanche diode, and aims at overcoming influencing caused by non-uniform avalanche breakdown voltage in application of the array SPAD (Singe Photo Avalanche Diode), and improving the consistency in detection sensitivity to the array SPAD. The array avalanche diode comprises M SPAD detectors, and the reversed bias voltage adjusting circuit comprises a reversed bias voltage sharing module, a data swell vessel and M voltage selectors, each voltage selector comprises N data input ends and a control input end, and each voltage selector is connected with one SPAD detector. The reversed bias voltage sharing module can provide bias voltage for anodes of the SPAD detectors at the same time, has the advantages of small circuit area, low power consumption and the like, and is suitable for a large-scale array detection system.

Description

technical field [0001] The invention relates to a reverse bias voltage adjustment circuit applied to array avalanche diodes, and relates to an integrated single-photon high-speed and high-sensitivity array detection circuit for photon timing and photon counting measurement in the technical field of single-photon detection. Background technique [0002] Single photon detection is a new detection technology developed in recent years. It can be used in biochip detection, medical diagnosis, high-voltage corona detection, non-destructive material analysis, astronomical observation, spectral measurement, national defense and military, quantum electronics and other fields, and plays an important role in it. The important engineering value of single photon detectors in some emerging high-tech fields has been more and more fully reflected. [0003] The single photon detector based on the semiconductor avalanche photodiode (APD) has the advantages of high quantum efficiency, low powe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J11/00
CPCG01J11/00
Inventor 郑丽霞翁子清胡欢朱田友吴金孙伟锋
Owner SOUTHEAST UNIV