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A kind of photovoltaic cell and preparation method thereof

A photovoltaic cell and electrochemical technology, applied in the direction of photovoltaic power generation, circuits, electrical components, etc., can solve the problems of thick absorbing layer, increased material cost, multi-material, etc., to achieve increased light absorption, increased optical distance, and high output power Effect

Inactive Publication Date: 2018-08-28
LIAONING UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in order to ensure sufficient absorption of incident light, the second-generation photovoltaic cells require a thicker absorbing layer, consume more materials, and increase material costs.

Method used

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  • A kind of photovoltaic cell and preparation method thereof
  • A kind of photovoltaic cell and preparation method thereof
  • A kind of photovoltaic cell and preparation method thereof

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Embodiment Construction

[0041] The present invention will be further described in detail below in conjunction with specific embodiments, so that those skilled in the art can implement it with reference to the text of the description.

[0042] Such as Figure 1-2 As shown, in an implementation form of the present invention, in order to achieve the above objectives, the present invention adopts the following technical solutions, including:

[0043] The back electrode 111 is made of a metal material for conducting current. As a preference, the back electrode 111 is made of gold or nickel gold or chromium gold material, and the thickness of the back electrode 111 is 1-5 μm.

[0044] The substrate layer 120 is disposed above the back electrode 111. As a preference, the substrate layer 120 is a silicon substrate.

[0045] n type In a Al a Ga 1-2a The N layer 150 is disposed above the substrate layer 120, where 0.18≤a≤0.30. n type In a Al a Ga 1-2a The N layer 150 is the n region of the solar cell p-i-n junction...

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Abstract

The invention discloses a photovoltaic cell and a preparation method thereof. The photovoltaic cell comprises a back electrode, a substrate layer, an n-type InaAlaGa1-2aN layer, a doped InbAlbGa1-2bN layer, a p-type IncAlcGa1-2cN layer, a window layer and a positive electrode, wherein the substrate layer is arranged on the back electrode, the n-type InaAlaGa1-2aN layer is arranged on the substrate layer, 0.18<=a<=0.30, the doped InbAlbGa1-2bN layer is arranged on the n-type InaAlaGa1-2aN layer, 0.32<=b<=0.48, the p-type IncAlcGa1-2cN layer is arranged on the doped InbAlbGa1-2bN layer, 0.12<=c<=0.38, the window layer is arranged on the p-type IncAlcGa1-2cN layer, the positive electrode is arranged on the window layer, and the substrate layer, the n-type InaAlaGa1-2aN layer, the doped InbAlbGa1-2bN layer, the p-type IncAlcGa1-2cN layer and the window layer are respectively provided with a light trapping structure. The photovoltaic cell has high output power and photoelectric conversion rate. The invention further provides a photovoltaic cell light trapping structure taper angle and etching calculation formula, the light path of light in the photovoltaic cell can be increased, light absorption is improved, and photoelectric conversion rate is increased.

Description

Technical field [0001] The invention relates to a photovoltaic field, in particular to a photovoltaic cell and a preparation method thereof. Background technique [0002] Solar photovoltaic cells (abbreviated as photovoltaic cells) are used to directly convert the sun's light energy into electrical energy. At present, a large number of ground-based photovoltaic systems use silicon solar cells based on silicon, which can be divided into monocrystalline silicon, polycrystalline silicon, and amorphous silicon solar cells. In terms of comprehensive performance such as energy conversion efficiency and service life, monocrystalline silicon and polycrystalline silicon batteries are superior to amorphous silicon batteries. Polycrystalline silicon has lower conversion efficiency than monocrystalline silicon, but it is cheaper. [0003] Group III-V solar cells represented by gallium arsenide have the advantages of low cost, high efficiency, and good stability, and are recognized as the sec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0232H01L31/18
CPCH01L31/02327H01L31/054H01L31/1804H01L31/1848Y02E10/52Y02E10/544Y02E10/547Y02P70/50
Inventor 李光林蔡坤良马永红吕娓
Owner LIAONING UNIVERSITY OF TECHNOLOGY