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A light-emitting diode chip and its preparation method

A technology of light-emitting diodes and chips, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low ODR reflection efficiency and achieve the effect of improving utilization rate and reflection efficiency

Active Publication Date: 2018-11-06
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Limited by the refractive index (1.5-2.1) of the oxide reflective layer, the overall reflection efficiency of the ODR is low

Method used

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  • A light-emitting diode chip and its preparation method
  • A light-emitting diode chip and its preparation method
  • A light-emitting diode chip and its preparation method

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0037] An embodiment of the present invention provides a light emitting diode chip, see figure 1 , the LED chip includes a substrate 1, a metal reflective layer 21, an oxide reflective layer 22, a P-type ohmic contact layer 3, a P-type current spreading layer 4, a P-type confinement layer 5, an active layer 6, an N-type Confinement layer 7 , N-type extension layer 8 , N-type ohmic contact layer 9 . Wherein, the P-type ohmic contact layer 3 is provided with an array of hemispherical grooves 10 extending to the P-type current spreading layer 4, and the oxide reflective layer 22 is provided with through holes 20 corresponding to the hemispherical grooves 10 one-to-one. The holes 20 communicate with the corresponding hemispherical grooves 10 .

[0038] In this embodiment, the substrate 1 is a Si substrate; the metal reflective layer 21 is made of gold (Au) or silver (Ag), and the oxide reflective layer 22 is made of ITO; the P-type ohmic contact layer 3 and the P-type current spr...

Embodiment 2

[0045] The embodiment of the present invention provides a method for preparing a light-emitting diode chip, which is suitable for preparing the light-emitting diode chip provided in Example 1, see figure 2 , the preparation method comprises:

[0046] Step 201: sequentially growing a buffer layer, an N-type corrosion stop layer, an N-type ohmic contact layer, an N-type current spreading layer, an N-type confinement layer, an active layer, a P-type confinement layer, a P-type current spreading layer, P-type ohmic contact layer.

[0047] Figure 3a It is a schematic structural diagram of the light emitting diode epitaxial wafer after step 201 is performed. Among them, 11 is the substrate, 12 is the buffer layer, 13 is the N-type corrosion stop layer, 9 is the N-type ohmic contact layer, 8 is the N-type current spreading layer, 7 is the N-type confinement layer, 6 is the active layer, 5 is the P-type confinement layer, 4 is the P-type current spreading layer, and 3 is the P-ty...

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Abstract

The invention discloses a light emitting diode chip and a preparation method thereof, wherein the light emitting diode chip and the preparation method belong to the field of semiconductor technology. The light emitting diode chip comprises the components of a substrate, a metal reflecting layer, an oxide reflecting layer, a P-type ohmic contact layer, a P-type current extension layer, a P-type restricting layer, an active layer, an N-type restricting layer, an N-type current extension layer and an N-type ohmic contact layer, wherein the substrate, the metal reflecting layer, the oxide reflecting layer, the P-type ohmic contact layer, the P-type current extension layer, the P-type restricting layer, the active layer, the N-type restricting layer, the N-type current extension layer and the N-type ohmic contact layer are successively laminated. The P-type ohmic contact layer is provided with an array of semispherical troughs which extend to the P-type current extension layer. The oxide reflecting layer is provided with through holes which are in one-to-one correspondence with the semispherical troughs. The through holes are communicated with the corresponding semispherical troughs. According to the light emitting diode chip and the preparation method thereof, a quasi vacuum layer with refractive index next to one is formed in the chip through the semispherical troughs and the through holes, thereby effectively reducing the refractive index of a low refractive index layer in an ODR which is composed of the metal reflecting layer and the oxide reflecting layer, and remarkably increasing reflecting efficiency of the ODR.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light emitting diode chip and a preparation method thereof. Background technique [0002] In recent years, the application fields of flip-chip AlGaInP light-emitting diodes (English: Light Emiting Diode, LED for short) with high brightness characteristics are becoming more and more extensive, and the market demand continues to expand. [0003] Flip-chip AlGaInP LED chip includes substrate, reflective layer, P-type ohmic contact layer, P-type current spreading layer, P-type confinement layer, active layer, N-type confinement layer, N-type current spreading layer, N-type ohmic contact layer from bottom to top. contact layer. [0004] In the process of realizing the present invention, the inventor finds that there are at least the following problems in the prior art: [0005] The reflective layer is generally a total reflection mirror composed of a metal reflective layer ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/46H01L33/44H01L33/22H01L33/00
CPCH01L33/005H01L33/22H01L33/44H01L33/46
Inventor 李彤韩家辉邢振远王世俊董耀尽
Owner HC SEMITEK ZHEJIANG CO LTD