High-frequency, high-output device unit

An equipment device and high-output technology, applied in semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve problems such as solder fracture, achieve the effect of inhibiting development and improving durability

Inactive Publication Date: 2017-03-01
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Once cracks occur in the solder due to the temperature difference caused by the use environment, the cracks tend to develop linearly at the joint interface between the lead wire and the solder, and the solder may break at an early stage

Method used

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  • High-frequency, high-output device unit
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  • High-frequency, high-output device unit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0028] figure 1 It is a perspective view showing the high-frequency high-output equipment device 10 according to Embodiment 1 of the present invention. figure 2 yes figure 1 Three views of the high-frequency high-output device 10 shown. It is assumed that the high-frequency high-output equipment device 10 of this embodiment has a frequency band of 800 MHz to 3.5 GHz and an output power of 100 W to 300 W, and is used in a mobile phone base station.

[0029] Such as figure 2 As shown, the semiconductor package 12 used in the high-frequency high-output device 10 of the present invention has a base plate 14 . A ceramic frame 16 is mounted on the base plate 14 . Leads 18 for connecting to a circuit board to be mounted are mounted on the ceramic frame 16 . The lead wires 18, the base plate 14, and the ceramic frame 16 were fixed with Ag solder. Furthermore, the ceramic cover 20 is fixed to the upper surface of the ceramic frame 16 with an epoxy resin adhesive.

[0030] Lead...

Embodiment approach 2

[0039] Figure 7 It is a plan view of the high-frequency high-output equipment device 10 according to Embodiment 2 of the present invention, and a cross-sectional view obtained by cutting the device along line VII-VII. This embodiment is the same as Embodiment 1 except that the opening 40 is replaced with the groove 42 . In this embodiment, the concave portion 60 is formed in the planar portion 32 by providing the plurality of grooves 42 in the planar portion 32 . Figure 7 The shown top view is a top view showing the high-frequency high-output equipment device 10 . Therefore, although the groove 42 does not originally appear in the top view, the position of the groove 42 is shown here in the top view with hatching for convenience. The depth of the groove 42 is about half the thickness of the lead 18 . In addition, there are no limitations on the width, depth, cross-sectional shape, and number of grooves.

[0040]According to the present embodiment, similarly to Embodiment...

Embodiment approach 3

[0042] Figure 8 It is a plan view of the high-frequency high-output equipment device 10 according to Embodiment 3 of the present invention. This embodiment is the same as Embodiment 1 except that the opening 44 is vertically longer in the longitudinal direction of the lead wire 18 . In the present embodiment, the concave portion 60 is formed in the planar portion 32 by providing a plurality of openings 44 in the lead wire 18 .

[0043] As in Embodiment 1, contact between the flat portion 32 and the solder 34 is interrupted by the opening 44 , and the stress applied to the portion of the solder 34 that is in contact with the flat portion 32 is reduced. Therefore, the occurrence of cracks can be suppressed.

[0044] In addition, according to the present embodiment, similar to the first embodiment, after a crack has occurred, the linear growth of the crack can be suppressed by the opening 44 . Therefore, the durability related to the breakage of the solder 34 can be improved,...

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PUM

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Abstract

The invention relates to a high-frequency and high-output device unit and relates to a high-frequency A high-frequency and high-output device unit suitable for the application in a mobile phone base station. To improve durableness related to solder fracture. The high-frequency and high-output device unit includes a lead (18) intended to be soldered to a circuit board (21) and the lead (18) includes concave portions (60) only in a planar portion (32) intended to be joined to the circuit board (21).

Description

technical field [0001] The present invention relates to a high-frequency high-output device, and relates to a high-frequency high-output device suitable for use in a mobile phone base station. Background technique [0002] Inside a semiconductor package used in a high-frequency high-output device, a semiconductor chip and circuit components are mounted on the upper surface of a base plate, and these components and leads are connected by gold wires. The lead wires function as electrodes for connecting a high-frequency high-output device and a circuit board to be mounted. [0003] Among high-frequency and high-output equipment devices that are compatible with the high output of the frequency band used by mobile phone base stations, a wide lead shape is often used in consideration of impedance and large current (for example, refer to Patent Document 1). . [0004] Patent Document 1: Japanese Patent Application Publication No. 2-72004 [0005] Patent Document 2: Japanese Unex...

Claims

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Application Information

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IPC IPC(8): H01L23/48H01L23/488H01L23/498
CPCH01L23/48H01L23/488H01L23/49811H01L23/49838H01L23/047H01L23/36H01L23/49541H01L23/49548H01L23/562H01L23/66
Inventor 鹤卷隆宫胁胜巳
Owner MITSUBISHI ELECTRIC CORP
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