RC-type electrostatic clamping circuit for ESD circuit

Abstract

The invention provides an RC-type electrostatic clamping circuit for an ESD circuit. The RC-type electrostatic clamping circuit comprises an RC circuit, an inverter group and a transistor assembly, wherein the transistor assembly comprises superimposed P-type transistor MP and N-type transistor MN. The conduction time of each transistor is reasonably selected, and a capacitor, a resistor and inverters are reasonably selected to generate a great leakage current advantage. When the RC-type electrostatic clamping circuit is used for high working voltage, the leakage current of the ESD circuit is effectively reduced on the premise of not excessively sacrificing the original performance of the ESD protection circuit, the area and the cost of a chip are not greatly increased and the problem of a fast increase of the leakage current of the clamping circuit is effectively solved.

Description

technical field [0001] The invention relates to an RC type electrostatic clamping circuit of an ESD circuit. Background technique [0002] Nowadays, competition in the consumer electronics industry is becoming increasingly white, leading to increasingly fierce competition in the integrated circuit industry. Application manufacturers, large and small, are racking their brains to reduce various costs, from chip manufacturing and packaging to board application to peripheral equipment, and so on. Controls are a hot topic. Moreover, the field of daily consumer electronics is doomed to replace electronic products much faster than other fields. Therefore, manufacturing costs may be more of a concern than the long-term useful life of the equipment. [0003] In this atmosphere, in order to save power devices and control board area, it is not uncommon for discrete IC devices to work across power domains in some applications that do not have strict performance requirements. These di...

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Problems solved by technology

But in fact, such a solution is often not worth the candle. The turn-off resistance (ROFF) of MN1 / MN2 and figure 1 Compared with MN1, there is no significant magnitude change, neither can effectively reduce the leakage current, but because the transistor MN1 / MN2 electrostatic leakage turn-on voltage becomes higher, it may pose a threat of electrostatic breakdown to the internal working circuit

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