Semiconductor device

Abstract

In one embodiment, a semiconductor device may include a controller that may be configured to receive an information signal from a detachable device wherein the information signal may be selectively representative of an output signal of the controller according to codes of the detachable device and to receive a sense input that may be representative of the output signal and to determine a code received from the detachable device according to a value of the sense signal and the information signal.the distance between the conductive layer at the upper portion of the semiconductor substrate and the upper surface of the semiconductor substrate is larger than the distance between the conductive layer at the upper portion of the semiconductor substrate and the upper surface of the semiconductor area.

Description

technical field [0001] The present invention relates to a semiconductor device having a fringe region with improved withstand voltage outside an active region. Background technique [0002] 11 of Patent Document 1 discloses the structure of a semiconductor device provided with a RESURF (Reduced Surface Field) region composed of a second conductivity type opposite to the first conductivity type, and performing pn combination with the semiconductor substrate of the first conductivity type; and a capacitive field electrode, which is arranged above the RESURF region. [0003] For example, there is an impurity concentration (1×10 15 ~1×10 17 [ / cm 3 ]) The specific impurity concentration is 1×10 17 ~1×10 18 [ / cm 3 ] The base area is a small RESURF area. The RESURF region further extends the depletion layer of the semiconductor substrate away from the active region, and can make the curvature of the depletion layer gentler. However, since the impurity concentration of the R...

AI Technical Summary

Problems solved by technology

If the thickness of the insulating film provided between the n-region surface outside the RESURF region and the conductor film constituting the capacitive FP is the same as the thickness of the insulating film between the conductor film constituting the capacitive FP on the RESURF region and the substrate surface, Then there is the following problem: the potential division effect caused by the capacitive FP on the surface of the n-region outside the RESURF region is strong, and the depletion layer is easy to reach the end of the n-region.

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