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Semiconductor device

A semiconductor, conductive type technology, applied in the direction of semiconductor lasers, laser parts, electrical components, etc., can solve the problem of large influence of diffusion, and achieve the effect of suppressing the reduction of luminous characteristics

Pending Publication Date: 2022-05-13
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, the influence of diffusion caused by impurities in the electrodes may be particularly large

Method used

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  • Semiconductor device
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0021] figure 1 It is a cross-sectional view of the semiconductor device 100 according to the first embodiment. The semiconductor device 100 is an optical semiconductor device such as a semiconductor laser. The semiconductor device 100 is used for optical communication, for example. The semiconductor device 100 includes a semiconductor substrate 10 . An n-type first cladding layer 12 is provided on the semiconductor substrate 10 . An n-type second cladding layer 14 is provided on the first cladding layer 12 . A p-type diffusion suppressing layer 40 is provided between the first cladding layer 12 and the second cladding layer 14 .

[0022] The upper side of the second covering layer 14 is narrower than the lower side. That is, the second cladding layer 14 has a mesa portion. An undoped active layer 20 is provided on the mesa portion of the second cladding layer 14 . A p-type third cladding layer 30 is provided on the active layer 20 . The mesa portion of the second clad...

Embodiment approach 2

[0055] image 3 It is a cross-sectional view of the semiconductor device 300 according to the second embodiment. Figure 4 Yes image 3 magnified view of . image 3 , 4 An example of a cross section perpendicular to the wave guiding direction of the semiconductor device 300 is shown. The semiconductor device 300 differs from Embodiment 1 in that a diffraction grating layer 340 is provided instead of the diffusion suppressing layer 40 .

[0056] In the semiconductor device 300 , the n-type first cladding layer 312 is provided on the semiconductor substrate 10 . The width of the upper side of the first cladding layer 312 is narrower than that of the lower side. That is, the first cladding layer 312 has a mesa portion. A p-type diffraction grating layer 340 is provided on the mesa portion of the first cladding layer 312 . An n-type second cladding layer 316 is provided on the diffraction grating layer 340 .

[0057] The undoped active layer 20 is provided on the second cl...

Embodiment approach 3

[0070] Figure 5 It is a cross-sectional view of the semiconductor device 400 according to the third embodiment. The present embodiment is characterized in that the active layer 420 is doped.

[0071] In the semiconductor device 400 , the n-type first cladding layer 12 is provided on the semiconductor substrate 10 . The width of the upper side of the first covering layer 12 is narrower than that of the lower side. That is, the first cladding layer 12 has a mesa portion. A p-type active layer 420 is provided on the mesa portion of the first cladding layer 12 . The p-type third cladding layer 30 is provided on the active layer 420 . The mesa portion of the first cladding layer 12 , the active layer 420 , and the third cladding layer 30 form the laminate mesa 11 . The mesa portion of the first cladding layer 12 , the active layer 420 , and the third cladding layer 30 are narrower than the semiconductor substrate 10 in cross-sectional view. Other structures are the same as t...

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Abstract

A semiconductor device according to the present invention is provided with: a semiconductor substrate; an n-type first cladding layer provided on the semiconductor substrate; an n-type second cladding layer provided on the first cladding layer; an active layer provided on the second cladding layer; a p-type third cladding layer provided on the active layer; a surface electrode provided on the third cladding layer; a back electrode disposed under the semiconductor substrate; and a p-type diffusion suppression layer provided between the first cladding layer and the second cladding layer.

Description

technical field [0001] The present invention relates to semiconductor devices. Background technique [0002] Patent Document 1 discloses a semiconductor laser. This semiconductor laser includes a p-type cladding layer, an n-type cladding layer, and an active layer provided between the p-type cladding layer and the n-type cladding layer. A first optical confinement layer made of an i-type semiconductor is provided between the active layer and the p-type cladding layer. A second optical confinement layer made of an i-type semiconductor is provided between the active layer and the n-type cladding layer. A diffusion suppressing layer for suppressing diffusion of impurities from the p-type cladding layer into the active layer is provided between the first optical confinement layer and the p-type cladding layer. [0003] The diffusion suppressing layer contains n-type impurities. Therefore, diffusion of Zn impurity from the p-type cladding layer does not reach the active layer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/323H01S5/227
CPCH01S5/34313H01S5/2275H01S5/3211H01S5/3235H01S5/3072H01S5/227H01S5/32333H01S5/34373H01S5/04256H01S5/3219H01S5/32308H01S2304/04
Inventor 河原弘幸
Owner MITSUBISHI ELECTRIC CORP
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