Alkyl aluminum solution, alkyl aluminum hydrolyzed composition solution, composition for coating and forming aluminum oxide film, article having aluminum oxide film

Abstract

A method for producing an aluminum oxide thin film is disclosed. (1) A solution containing an alkylaluminum compound or a partial hydrolyzate thereof, and a cyclic amide compound of the general formula (4). (2) A method of applying a composition containing a partial hydrolyzate of an organoaluminum compound represented by the general formula (6) on the surface of a substrate under an inert gas atmosphere, followed by heating. (3) A method comprising spraying an organic solvent solution of the organoaluminum compound represented by the general formula (6) or a partial hydrolyzate thereof to form a coating film, and heating to form an aluminum oxide film. (4) The method is to apply a solution containing an alkylaluminum compound and an electron-donating organic solvent that does not contain active hydrogen atoms on a substrate, and heat the formed coating film to obtain an aluminum oxide film. (5) A passivation film forming agent containing the aforementioned solution, and a method of producing a silicon substrate having a passivation film using the same. Silicon substrate and solar cell element with passivation film. (4); (6).

Description

technical field [0001] The first aspect of the present invention (hereinafter may be referred to as the present invention 1) relates to an alkylaluminum solution and an alkylaluminum hydrolysis composition having high chemical stability against air. The alkylaluminum solution of the present invention 1 is a solution and a composition that can be used as a stable alkylating agent or reactant that does not change chemically even when handled in air. As long as the solution of the alkylaluminum-containing partial hydrolyzate of the present invention 1 is used, an aluminum oxide thin film can be formed even in air. [0002] A second aspect of the present invention (hereinafter, may be referred to as present invention 2) relates to a composition for forming an aluminum oxide film coating, a method for producing an article having an aluminum oxide film, and an article having an aluminum oxide film. The composition for forming an aluminum oxide film coating according to the present ...

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Problems solved by technology

[0040] In this way, when using an aluminum oxide film-forming composition obtained by using a complex compound of an amine compound and an aluminum hydride compound or an organic solvent solution of an alkylaluminum compound as an organoaluminum compound, there is a problem that the Atmospheric pressure, aluminum oxide film cannot be obtained

[0083] However, in the methods described in the aforementioned Patent Documents 4-1 to 4-2, when heat treatment (firing) is performed together to produce a passivation film, residual organic components such as binder resins and ligands need to be fired to thereby Degreasing (removal), so there is a problem that it takes a long time to sinter or heat treatment at a high temperature of about 400~1000°C

[0084] Further, there is also a problem that it is difficult to obtain a transparent zinc oxide thin film (the transmittance of visible light at 550 nm is 80% or more) by heat treatment at low temperature.

[0085] In particular, since firing at 300°C or higher is required, there is a problem that it cannot be applied to substrates that do not have heat resistance, such as plastics.

Therefore, it is practically difficult to use the trialkylaluminum compound without dilution etc.

When trialkyl compounds are diluted in organic solvents, the risk of fire and other hazards can be reduced, but there are no research cases on the spraying of trialkyl compounds diluted in organic solvents.

[0100] However, in the methods described in the above-mentioned Non-Patent Document 5-1 and Patent Document 5-3, when heat treatment (firing) is performed together to manufacture a passivation film, residual organic components such as binder resins and ligands need to be processed. Degreasing (removal) by firing, so there is a problem that firing takes a long time, or heat treatment at a high temperature of 650~1000°C is required

[0101] In addition, the carrier lifetime of the passivation film produced by the method described in the above-mentioned non-patent document 5-1 and patent document 5-3 is 100 to 500 μs when the substrate wafer thickness is about 700 μm, which is different from that of the passivation film produced by the ALD method. The film is shorter than the film, which requires further improvement of the carrier lifetime

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